Tokyo Electron Limited

Kla Tencor Corporation

Timbre Technologies, Inc.

Oplink Communications, Inc.

Applied Materials, Inc.

Kla Corporation

Nanometrics Inc.

Oplinic Communications, Inc.

Transamerican Technologies International Dba Tti Medical

Transamerica Technologies International

Shifang Li

Junwei Bao

Manuel B Madriaga

Hanyou Chu

Wei Liu

Wen Jin

Xinhui Niu

Vi Vuong

Lena Nicolaides

Youxian Wen

Qing Shao

Nickhil Jakatdar

Sanjay K Yedur

Joerg Bischoff

Paul Horn

Zhigang Chen

Weidong Yang

Prashant Aji

Allen R Howes

Xinyuan Chong

Yudong Hao

Timothy Goodwin

Weidung Yang

Ping Wang

Guoheng Zhao

Yan Chen

Stilian Pandev

Adam Eales Norton

Wenhui Wang

Hongyu Henry Yue

Xinkang Tian

Srinivas Rao Doddi

John Charles Robinson

Mohan Mahadevan

Mark Shi Wang

Yong Zhang

Emmanuel Drege

Ching-Ling Meng

Zhimin Liu

Holger Tuitje

Mihail Mihaylov

David W Price

Victor D Liu

Oreste Donzella

Robert J Rathert

Zhuan Liu

Xuguang Jiang

Chet V Lenox

Ying Luo

Kaushik Sah

Barry Saville

Raul V Tan

Mike Von Den Hoff

Alan Nolet

Justin Lach

Weiwen Xu

Thomas Groos

Andreas Schulze

Yanbin Shao

Sven Schwitalla

Chao Liu

Chengqing Wang

Ian McDonald

Yu Liu

Richard Graetz

Thomas Krah

Heiko Eisenbach

Hong Qui

Moritz Stoerring

Methods and systems for temperature-based metrology calibration at a manufacturing system are provided. First metrology data corresponding to one or more first temperatures associated with a substrate following a completion of one or more portions of a substrate process at a manufacturing system is obtained. Second metrology data corresponding to a second temperature associated with the substrate following the completion of the substrate process is determined in view of calibration data associated with the substrate. The second temperature is different from each of the one or more first temperatures. In response to a determination, in view of the second metrology data, that a modification criterion associated with the substrate process is satisfied, the substrate process recipe is modified.

Temperature-based metrology calibration at a manufacturing system

A die screening system may receive die-resolved metrology data for a population of dies on one or more samples from the one or more in-line metrology tools after one or more fabrication steps, where the die-resolved metrology data includes images generated using one or more measurement configurations of the one or more in-line metrology tools. In this way, the die-resolved metrology data provides many measurement channels per die, where a particular measurement channel includes data from a particular pixel of a particular image. The controller may then generate screening data for the population of dies from the die-resolved metrology data, where the screening data includes a subset of the plurality of measurement channels of the die-resolved metrology data, and screen the plurality of dies into two or more disposition classes including at least outlier dies based on variability in the screening data.

Imaging reflectometry for inline screening

A method includes receiving, by a processing device, first data. The first data includes data from one or more sensors of a processing chamber and is associated with a processing operation. The first data is resolved in at least two dimensions, one of which is time. The method further includes providing the first data to a model. The method further includes receiving from the model second data. The second data includes an indication of an evolution of a processing parameter during the processing operation. The method further includes causing performance of a corrective action in view of the second data.

Holistic analysis of multidimensional sensor data for substrate processing equipment

Systems, methods, and computer-readable mediums for monitoring temperature of a substrate are described. Spectroscopic measurements are performed on a surface of the substrate using a metrology tool integrated with a processing tool. The measurements may be used to determine that the substrate has cooled below a threshold temperature using the spectroscopic measurements.

Using spectroscopic measurements for substrate temperature monitoring

A review system and operation method directs a beam of light toward a sample on a stage. The sample is a wafer level packaging wafer or a backend wafer. Defect review is performed based on the light reflected from the sample. The review system can use one or more of: a fluid supplied by an immersion subsystem that includes a fluid supply unit and a fluid removal unit; an illumination pattern for differential phase contrast; or ultraviolet or deep ultraviolet wavelengths.

Systems and methods of high-resolution review for semiconductor inspection in backend and wafer level packaging

Methods and systems for determining metrology-like information for a specimen using an inspection tool are provided. One method includes determining first process information for first feature(s) formed in first area(s) on a specimen from output generated by output acquisition subsystem(s) that include an inspection subsystem. The method also includes determining second process information for second feature(s) formed in second area(s) on the specimen from the output and at least a portion of the first process information. At least a portion of the second process information is a different type of information than the first process information. At least a portion of a design for the second feature(s) is different than a design for the first feature(s), and the first area(s) and the second area(s) are mutually exclusive on the specimen.

Determining metrology-like information for a specimen using an inspection tool

A system is configured to perform metrology on a front surface, a back surface opposite the front surface, and/or an edge between the front surface and the back surface of a wafer. This can provide all wafer metrology and/or metrology of thin films on the back surface of the wafer. In an example, the thickness and/or optical properties of a thin film on a back surface of a wafer can be determined using a ratio of a greyscale image of a bright field light emerging from the back surface of the wafer under test to that of a reference wafer.

All surface film metrology system

Wafer edge profile images are analyzed at locations around a bonded wafer, which may have a top wafer and a carrier wafer. An offset curve is generated based on the wafer edge profile images. Displacement of the top wafer to the carrier wafer is determined based on the offset curve. The wafer edge profile images may be generated at multiple locations around the wafer. The wafer edge profile images may be shadowgram images. A system to determine displacement of the top wafer to the carrier wafer can include an imaging system connected with a controller.

Bonded wafer metrology

Disclosed are apparatus and methods for determining height of a semiconductor structure. The system includes an illumination module for directing one or more source lines or points towards a specimen having multiple surfaces at different relative heights and a collection module for detecting light reflected from the surfaces. The collection module contains at least two detectors with one slit or pinhole in front of each detector that that are positioned to receive light reflected from one of the surfaces. A first detector receives reflected light from a slit or pinhole that is positioned before a focal point, and a second detector receive reflected light from a slit or pinhole that is positioned after the focal point so that the first and second detector receive light having different intensity values unless the surface is at an optimum focus. The system includes a processor system for determining a height based on the detected light received by the detectors from two of the surfaces.

Methods and apparatus for measuring height on a semiconductor wafer

Two or more color data can be combined to form a new data source to enhance sensitivity to defocus signal. Defocus detection can be performed on the newly formed data source. In a setup step, a training wafer can be used to select the best color combination, and obtain defocus detection threshold. This can include applying a segment mask, calculating mean intensities of the segment, determining a color combination that optimizes defocus sensitivity, and generating a second segment mask based on pixels that are above a threshold to sensitivity. In a detection step, the selected color combination is calculated, and the threshold is applied to obtain defocus detection result.

Method for defocus detection

A system that can be used for semiconductor height inspection and metrology includes a complementary plate that is used with a beam splitter to create desired astigmatism and to remove chromatic aberration. Simultaneous optimization of lateral resolution and sensitivity can be enabled. The complementary plate can be made of the same material and have the same thickness as the beam splitter.

Method of improving lateral resolution for height sensor using differential detection technology for semiconductor inspection and metrology

A system includes a first beam splitter, a second beam splitter, and a mirror. The second beam splitter can produce two lines of light, which are received by at least one sensor. The two lines of light have different focal heights on the wafer. A distance between the second beam splitter and the mirror can be configured to change a focal height on the wafer. A height of an illuminated region on a surface of the wafer relative to a normal surface of the wafer can be determined using the two lines of light.

Increasing dynamic range of a height sensor for inspection and metrology

This semiconductor inspection and metrology system includes a knife-edge mirror configured to receive light reflected from a wafer. The knife-edge mirror is positioned at a focal point of the light reflected from the wafer such that the reflective film on the knife-edge mirror is configured to block at least some of the light reflected from the wafer. The portion of blocked light changes when the light reflected from the wafer is under-focused or over-focused. At least one sensor receives the light reflected from the wafer. Whether the light is under-focused or over-focused can be determined using a reading from the at least one sensor. A height of an illuminated region on the surface of the wafer can be determined using such a reading from the at least one sensor.

Line scan knife edge height sensor for semiconductor inspection and metrology

A device and method for surface height profiling are presented. The device has a source with a source slit through which light is provided. The device includes an objective lens having a reference surface. The objective lens is configured to illuminate a sample with test light from the source and to combine test light reflected from the sample with reference light reflected from the reference surface to form combined light. A spectrometer is positioned to receive the combined light at an entrance slit. The spectrometer is configured to image the combined light as a 2D image with a wavelength dimension and a spatial position dimension. A processor in electrical communication with the spectrometer is programmed to receive a signal representing the 2D image and to determine a surface height profile of the sample based on the signal.

Line scan spectroscopic white light interferometry for semiconductor inspection and metrology

Systems and methods for enhancing inspection sensitivity to detect defects in wafers using an inspection tool are disclosed. A plurality of light emitting diodes illuminate at least a portion of a wafer and capture a set of grayscale images. A residual signal is determined in each image of the grayscale image set and the residual signal is subtracted from each image of the grayscale image set. Defects are identified based on the subtracted grayscale image set. Models of the inspection tool and wafer may be built and refined in some embodiments of the disclosed systems and methods.

Systems and methods for enhancing inspection sensitivity of an inspection tool

Growing community of inventors

Pleasanton, CA, United States of America

Shifang Li