Mediatek Corporation

Ultratera Corporation

Utac (taiwan) Corporation

Other

United Test Center Inc.

Shiann-Tsong Tsai

Chia-Hao Hsu

Tai-Yu Chen

Chi-Yuan Chen

Hsing-Chih Liu

Chung-Fa Lee

Yao-Pang Hsu

Yu-Ming Hsu

Wen-Lung Wu

Kuen-Huang Chen

Wen-Sheng Su

Chin-Hsing Lin

Hsueh-Te Wang

Chung-Che Tsai

Chin-Chiang Chang

A semiconductor package includes a base comprising a top surface and a bottom surface that is opposite to the top surface; a first semiconductor chip mounted on the top surface of the base in a flip-chip manner; a second semiconductor chip stacked on the first semiconductor chip and electrically coupled to the base by wire bonding; an in-package heat dissipating element comprising a dummy silicon die adhered onto the second semiconductor chip by using a high-thermal conductive die attach film; and a molding compound encapsulating the first semiconductor die, the second semiconductor die, and the in-package heat dissipating element.

Semiconductor package having improved thermal interface between semiconductor die and heat spreading structure

A semiconductor package includes a carrier substrate having a top surface; a semiconductor die mounted on the top surface; first bonding wires connecting the semiconductor die to the carrier substrate; an insulating material encapsulating the plurality of first bonding wires; a component having a metal layer mounted on the insulating material; second bonding wires connecting the metal layer of the component to the carrier substrate; and a molding compound covering the top surface of the carrier substrate and encapsulating the semiconductor die, the component, the first bonding wires, the second bonding wires, and the insulating material. The metal layer and the second bonding wires constitute an electromagnetic interference (EMI) shielding structure.

Semiconductor package with EMI shielding structure

A semiconductor package including a base comprising an upper surface and a lower surface that is opposite to the upper surface; a radio-frequency (RF) module embedded near the upper surface of the base; an integrated circuit (IC) die mounted on the lower surface of the base in a flip-chip manner so that a backside of the IC die is available for heat dissipation; a plurality of conductive structures disposed on the lower surface of the base and arranged around the IC die; and a metal thermal interface layer comprising a backside metal layer that is in contact with the backside of the IC die, and a solder paste conformally printed on the backside metal layer.

A semiconductor package includes a carrier substrate having a top surface; a semiconductor die mounted on the top surface; a plurality of first bonding wires connecting the semiconductor die to the carrier substrate; an insulating material encapsulating the plurality of first bonding wires; a component having a metal layer mounted on the insulating material; a plurality of second bonding wires connecting the metal layer of the component to the carrier substrate; and a molding compound covering the top surface of the carrier substrate and encapsulating the semiconductor die, the component, the plurality of first bonding wires, the plurality of second bonding wires, and the insulating material. The metal layer and the plurality of second bonding wires constitute an electromagnetic interference (EMI) shielding structure.

A semiconductor package includes a carrier substrate having a top surface, a semiconductor die mounted on the top surface, a plurality of bonding wires connecting an active surface of the semiconductor die to the top surface of the carrier substrate, an insulating material encapsulating the plurality of bonding wires, a component mounted on the insulating material, and a molding compound covering the top surface of the carrier substrate and encapsulating the semiconductor die, the plurality of bonding wires, the component and the insulating material.

Semiconductor package having multi-tier bonding wires and components directly mounted on the multi-tier bonding wires

A semiconductor package includes a substrate having thereon a high-frequency chip and a circuit component susceptible to high-frequency signal interference; a ground pad on the and between the high-frequency chip and the circuit component; a metal-post reinforced glue wall on the ground pad; a molding compound surrounding the metal-post reinforced glue wall and surrounding the high-frequency chip and the circuit component; and a conductive layer disposed on the molding compound and in contact with the metal-post reinforced glue wall. The metal-post reinforced glue wall comprises first metal posts and glue attached to the first metal posts. An interface between a base of each of the first metal posts and the ground pad has a root mean square (RMS) roughness that is less than 1.0 micrometer.

Semiconductor package and fabrication method thereof

A semiconductor package includes a base having an upper surface and a lower surface opposite to the upper surface. An antenna array structure is embedded at the upper surface of the base. An IC die is mounted on the lower surface of the base in a flip-chip manner so that a backside of the IC die is available for heat dissipation. Solder ball pads are disposed on the lower surface of the base and arranged around the IC die. The semiconductor package further includes a metal thermal interface layer having a backside metal layer that is in direct contact with the backside of the IC die, and a solder paste conformally printed on the backside metal layer.

A semiconductor chip package includes a substrate; a semiconductor die mounted on the substrate, wherein the semiconductor die comprises a bond pad disposed on an active surface of the semiconductor die, and a passivation layer covering perimeter of the bond pad, wherein a bond pad opening in the passivation layer exposes a central area of the bond pad; a conductive paste post printed on the exposed central area of the bond pad; and a bonding wire secured to a top surface of the conductive paste post. The conductive paste post comprises copper paste.

Semiconductor chip package with resilient conductive paste post and fabrication method thereof

A method for fabricating a semiconductor package is provided. Semiconductor dice are disposed on a top surface of a carrier. Each of the semiconductor dice has an active surface and a bottom surface that is opposite to the active surface. Input/output (I/O) pads are distributed on the active surface. Interconnect features are printed on the carrier and on the active surface of each of the semiconductor dice. The top surface of the carrier, the semiconductor dice and the interconnect features is encapsulated with an encapsulant. The carrier is then removed.

Method for fabricating a semiconductor package

The invention provides a semiconductor package assembly. The semiconductor package assembly includes a core substrate formed of a first material having a device-attach surface and a solder-bump-attach surface opposite to the die-attach surface. A bump pad is disposed on the bump-attach surface. A first solder mask layer formed of the first material covers the bump-attach surface of the core substrate and a portion of the bump pad. A second solder mask layer covers the device-attach surface of the core substrate, wherein the second solder mask layer is formed of a second material.

Semiconductor package assembly

A semiconductor package includes a carrier substrate having a top surface, a semiconductor die mounted on the top surface, a plurality of bonding wires connecting the semiconductor die to the carrier substrate, an insulating material coated on the bonding wires, and a molding compound covering the top surface and encapsulating the semiconductor die, the plurality of bonding wires, and the insulating material.

Semiconductor package with coated bonding wires and fabrication method thereof

A semiconductor package includes a circuit board, a semiconductor chip, a heat spreading layer, an encapsulant layer, a plurality of conductive connections, and a plurality of solder balls. The circuit board includes opposite first and second surfaces and a plurality of through holes. The semiconductor chip is formed over a center portion of the first surface of the circuit board, having an active surface facing the circuit board. The heat spreading layer is formed over the semiconductor chip. The encapsulant layer is formed over the circuit board, covering heat spreading layer, the semiconductor chip, and the circuit board. The plurality of conductive connections respectively passes through the through holes and electrically connecting the semiconductor chip with the circuit board. The plurality of solder balls are formed over the second surface of the circuit board.

Semiconductor package

A semiconductor package includes a semiconductor die having an active surface and a bottom surface opposite to the active surface; a plurality of bond pads distributed on the active surface of the semiconductor die; an encapsulant covering the active surface of the semiconductor die, wherein the encapsulant comprises a bottom surface that is flush with the bottom surface of the semiconductor; and a plurality of printed interconnect features embedded in the encapsulant for electrically connecting the plurality of bond pads. Each of the printed interconnect features comprises a conductive wire and a conductive pad being integral with the conductive wire.

Growing community of inventors

Hsinchu, Taiwan

Shiann-Tsong Tsai