Cabot Microelectronics Corporation

Shi-Wei Cheng

Ching-Ming Tsai

Kun-Shu Yang

Jia-Cheng Hsu

Sheng-Huan Liu

Feng-Chih Hsu

Craig Kokjohn

Hui-Feng Chen

The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises a plurality of grooves composed of at least a first plurality of concentric grooves having a first center of concentricity, and a second plurality of concentric grooves having a second center of concentricity. The first center of concentricity is not coincident with the second center of concentricity, the axis of rotation of the polishing pad is not coincident with at least one of the first center of concentricity and the second center of concentricity, the plurality of grooves does not consist of a continuous spiral groove, and the polishing surface does not comprise a mosaic groove pattern.

Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith

The invention provides a polishing pad and a method of using the polishing pad for chemically-mechanically polishing a substrate. The polishing pad comprises at least a grooved region and an exclusion region, wherein the exclusion region is adjacent to the circumference of the polishing pad, and wherein the exclusion region is devoid of grooves.

CMP polishing pad having edge exclusion region of offset concentric groove pattern

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Aurora, IL, United States of America

Shi-Wei Cheng