Applied Materials, Inc.

Shi-Ping Wang

Shijian Li

Fred Conrad Redeker

Jui-lung Li

David H Mai

Gary Lam

Rajeev Bajaj

Yongqi Hu

Kapila P Wijekoon

Ramin Emami

Tony Kaushal

Rahul Surana

Yongsik Moon

John M White

Manoocher Birang

Stan D Tsai

Andrew J Nagengast

Wei-Yung Hsu

Lizhong Sun

Alain Duboust

Sen-Hou Ko

Antoine P Manens

Zhihong Wang

Martin Scales

Jose Salas-Vernis

Douglas Orcutt Brown

A retaining ring for chemical mechanical polishing is described. The ring has a bottom surface with non-intersecting grooves. Alternating grooves are at opposing angles to one another.

Grooved retaining ring

Method and apparatus are provided for polishing conductive materials with low dishing of features and reduced or minimal remaining residues. In one aspect, a method is provided for processing a substrate by polishing the substrate to remove bulk conductive material and polishing the substrate by a ratio of carrier head rotational speed to platen rotational speed of between about 2:1 and about 3:1 to remove residual conductive material. In another aspect, a method is provided for processing a substrate including polishing the substrate at a first relative linear velocity between about 600 mm/second and about 1900 mm/second at the center of the substrate, and polishing the substrate at a second relative linear velocity between about 100 mm/second and about 550 mm/second at the center of the substrate.

Method of chemical mechanical polishing with high throughput and low dishing

Method and apparatus are provided for polishing substrates comprising conductive and low k dielectric materials with reduced or minimum substrate surface damage and delamination. In one aspect, a method is provided for processing a substrate including positioning a substrate having a conductive material formed thereon in a polishing apparatus having one or more rotational carrier heads and one or more rotatable platens, wherein the carrier head comprises a retaining ring and a membrane for securing a substrate and the platen has a polishing article disposed thereon, contacting the substrate surface and the polishing article to each other at a retaining ring contact pressure of about 0.4 psi or greater than a membrane pressure, and polishing the substrate to remove conductive material.

Method and apparatus for polishing metal and dielectric substrates

Methods and apparatus for polishing substrates comprising conductive and dielectric materials with reduced topographical defects

The present invention generally provides a system and apparatus for cleaning a polishing pad, such as a fixed abrasive pad, in a substrate processing system. In one embodiment, the system includes one or more nozzles which spray a fluid at pressures of about 30 psi to about 300 psi or greater, as measured at the nozzle, onto a polishing pad at acute angles to the surface of the polishing pad. The nozzles can spray downward and outward toward the perimeter of the pad to facilitate the debris removal therefrom. The system can include a pressure source to produce a sufficient fluid pressure substantially higher than the typical fluid pressure available from a facility installation.

Pad cleaning for a CMP system

Generally, a method and apparatus for retaining polishing material is provided. In one embodiment, the apparatus includes a platen having a top surface, a plurality of channels and one or more vacuum ports. The top surface is adapted to support the polishing material. The plurality of channels are formed in a polishing area of the top surface. The vacuum ports are disposed in the platen and at least one port is in communication with at least one of the channels. Upon application of a vacuum to the ports, the channels remove fluids under the polishing material while securing the polishing material to the top surface.

Platen for retaining polishing material

Growing community of inventors

Fremont, CA, United States of America

Shi-Ping Wang