Asml Holding N.v.

Hughes Aircraft Company

The Perkin-elmer Corporation

Integrated Process Equipment Corporation

Asml Holdings N.v.

Asml Hodling N.v.

Asml Netherlands B.v.

Sherman K Poultney

Azat M Latypov

George J Gardopee

Joseph P Prusak

Arno Jan Bleeker

Haico Victor Kok

Yuli Vladimirsky

Wenceslao A Cebuhar

Christopher John Mason

Peter B Mumola

Paul J Clapis

Joseph H Oberheuser

Thomas J McHugh

Hans G Sippach

A wavefront measurement system includes a source of electromagnetic radiation. An illumination system delivers the electromagnetic radiation to an object plane. A source of a diffraction pattern is in the object plane. A projection optical system projects the diffraction pattern onto an image plane, which includes a mechanism (e.g., a shearing grating) to introduce the lateral shear. A detector is located optically conjugate with the pupil of the projection optical system, and receives an instant fringe pattern, resulting from the interference between sheared wavefronts, from the image plane. The diffraction pattern is dynamically scanned across a pupil of the projection optical system, and the resulting time-integrated interferogram obtained from the detector is used to measure the wavefront aberration across the entire pupil.

Method and system for wavefront measurements of an optical system

A method for measuring a wavefront of an optical system. A first step of the method includes directing electromagnetic radiation uniformly at an object plane having a first grating positioned therein. Lines of the first grating comprise a plurality of dots. A second step of the method includes projecting an image of the first grating onto a focal plane having a second grating positioned therein. A third step of the method includes measuring the wavefront of the optical system based on a fringe pattern produced by the second grating.

Methods for measuring a wavefront of an optical system

A grating includes an absorptive substrate and a plurality of reflective lines on the absorptive substrate. Each reflective line is formed by a plurality of reflective areas. The reflective areas can be arranged in a regular pattern. The reflective areas are between 70 nm and 120 nm in diameter. The reflective areas can be circular. The reflective areas can have a random height distribution.

Grating for EUV lithographic system aberration measurement

A method and system as used to calibrate a reflective SLM. The system can include the SLM having an array of pixels and a projection optical system resolving individual pixels and having an apodized pupil. During a calibration operation, the pixels of the SLM receive varying voltage values to move them through various angles. Light reflecting from the pixels during these movements forms individual images for each pixel at each angle. The light passes through the apodized pupil and is received on one or more sections of a detector. The apodization pattern is selected so that individual pixels remain well resolved with strong sensitivity to the pixel mirror tilt. The light intensity received for each pixel at each angle is correlated to the voltage value received at the pixel to tilt the pixel to that angle producing a result signal used by a control device to calibrate the SLM.

System and method for calibrating a spatial light modulator

Provided are a method and system for determining states of spatial light modulator (SLM) pixels in a lithography system configured to print a desired pattern. The method includes determining diffraction orders associated with an ideal mask of a pattern to be printed by the lithography system, and then configuring the states of the SLM pixels to match all the diffraction orders that are relevant in the image formation.

Method and system for a maskless lithography rasterization technique based on global optimization

A wavefront measurement system includes a source of electromagnetic radiation. An imaging system directs the electromagnetic radiation at an object plane that it uniformly illuminates. A first grating is positioned in the object plane to condition the radiation entering the input of a projection optic. A projection optical system projects an image of the first grating onto the focal plane. A second grating is positioned at the focal plane that receives a diffracted image of the object plane to form a shearing interferometer. A CCD detector receives the image of the pupil of the projection optical system through the projection optical system and the second grating that forms a fringe pattern if there are aberrations in the projection optical system. Phaseshift readout of fringe pattern can be accomplished by stepping the first grating in a lateral direction and reading each frame with the CCD detector.

Transmission shear grating in checkerboard configuration for EUV wavefront sensor

A system for calibrating a spatial light modulator array includes an illumination system and a spatial light modulator array that reflects or transmits light from the illumination system. A projection optical system images the spatial light modulator array onto an image plane. A shearing interferometer creates an interference pattern in the image plane. A controller controls modulation of elements of the spatial light modulator array. The shearing interferometer includes a diffraction grating, a prism, a folding mirror or any other arrangement for generating shear. The shearing interferometer can be a stretching shearing interferometer, a lateral shearing interferometer, or a rotational shearing interferometer. The shearing interferometer may include a diffraction grating with a pitch corresponding to a shear of the light by an integer number of elements. The projection optics resolves each element of the spatial light modulator array in the image plane. The controller can modulate alternate columns of elements of the spatial light modulator array.

System and method for calibrating a spatial light modulator array using shearing interferometry

In one configuration of an arrangement according to an embodiment of the invention, a first grating patch on one module is aligned with a first grating patch on another module. In a different configuration of the arrangement, a second grating patch on the one module is aligned with a second grating patch on the other module. The two configurations are not aligned at the same time.

Grating patch arrangement, lithographic apparatus, method of testing, device manufacturing method, and device manufactured thereby

The present invention provides systems and methods for maskless lithographic printing that compensate for static and/or dynamic misalignments and deformations. In an embodiment, a misalignment of a pattern formed by a spatial light modulator is measuring during printing. Rasterizer input data is generated based on the measured misalignment and passed the rasterizer. The rasterizer generates pattern data, based on the rasterizer input data, that is adjusted to compensate for the measured misalignment. The pattern data generated by the rasterizer is passed to the spatial light modulator and used to form a second pattern, which includes compensation for the measured misalignment. In an embodiment, deformations caused, for example, by a warping a surface of the spatial light modulator are measured and used by the rasterizer to generate pattern data that compensates for the deformations.

System and method to compensate for static and dynamic misalignments and deformations in a maskless lithography tool

A wavefront measurement system includes a source of electromagnetic radiation. An imaging system directs the electromagnetic radiation at an object plane that it uniformly illuminates. A first grating is positioned in the object plane to condition the radiation entering the input of a projection optic. A projection optical system projects an image of the first grating onto the focal plane. A second grating is positioned at the focal plane that receives a diffracted image of the source to form a shearing interferometer. A CCD detector receives the image of the first grating through the projection optical system and the second grating that forms a fringe pattern if there are aberrations in the projection optical system. Phaseshift readout of fringe pattern can be accomplished by stepping the first grating in a lateral direction and reading each frame with the CCD detector. The first grating includes a plurality of reflecting lines each formed by a plurality of reflecting dots. The first grating has a pitch that is &#xbd; times the magnification of the projection system times the pitch of the second grating for achromatic operation.

Tailored reflecting diffractor for EUV lithographic system aberration measurement

A method for co-registering a semiconductor wafer (14) undergoing work in one or more blind process modules (10), (12) requires a means (16), (18) for consistently and repeatably registering the semiconductor wafer (14) to each process module (10), (12). Given this consistent and repeatable singular wafer registration means (16), (18), the location of the coordinate axes of each process module (10), (12) is determined with respect to the position of the semiconductor wafer (14) that is registered therein. The present invention method provides three approaches for determining the location of these axes: (1) an absolute location of the axes, (2) a relative location of the axes using one blind process module (10) to measure the position of a pattern etched into the semiconductor wafer (14) with another blind process module (12), and (3) a relative location of the axes using one blind process module (10) to measure surface or layer thickness characteristics in the semiconductor wafer (14) as modified by wafer processing. Regardless of which approach is followed, the determination of the location of the coordinate axes in each process module (10), (12) is an effective co-registration of the semiconductor wafer (14).

Method for co-registering semiconductor wafers undergoing work in one or

A system is provided for processing wafers, such as silicon and silicon-on-insulator wafers. The processing includes thinning and flattening of the wafers at a work station located directly beneath a down looking metrology apparatus for directing light onto the wafer and measuring the light wavefronts reflected from the wafer. The metrology apparatus for flattening includes the feature of a multiple lens array for arranging the reflected wavefronts into a plurality of light spots, and a charge-coupled-device light responsive device for receiving the light spots and determining the shape of the wavefronts. The system also provides a wafer transport system for moving one or more wafers into one or more work stations beneath the metrology apparatus in a vacuum chamber.

Apparatus for measuring, thinning and flattening silicon structures

A method for controlling the flow of semiconductor wafers within a semiconductor wafer processing facility. This method includes a wafer storage and preparation area (10) and a wafer metrology and etch area (12), both of which are monitored and/or controlled by a master controller (14). The wafer storage and preparation area (10) is typically kept at a class 10 clean room level and is comprised of a wafer storage area (16) and a wafer preparation area (18). The wafer metrology and etch area (12) is typically kept at a class 1000 clean room level and is comprised of an I/O cassette module (22), a wafer pre-aligner (24), a wafer router (26), a wafer metrology instrument (28), and a wafer etching instrument (30). The semiconductor wafers are transported, either manually or automatically, between the wafer storage area (16) and the wafer preparation area (18), as well as between the wafer storage and preparation area (10) and the wafer metrology and etch area (12), within wafer storage cassettes ( 20). The semiconductor wafers are individually transported between the I/O cassette module (22), the wafer pre-aligner (24), the wafer metrology instrument (28), and the wafer etching instrument (30) by the wafer router (26).

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Wilton, CT, United States of America

Sherman K Poultney