Taiwan Semiconductor Manufacturing Comp. Ltd.

Sheng-Yung Chang

Chi On Chui

Hsin-Yi Lee

Cheng-Lung Hung

The present disclosure describes a method for forming a semiconductor device having a work function metal layer doped with tantalum to mitigate oxygen diffusion and improve device threshold voltage. The method includes forming a gate dielectric layer on a channel structure and forming a work function metal layer on the gate dielectric layer. The gate dielectric layer includes an interfacial layer on the channel structure and a high-k dielectric layer on the interfacial layer. The method further includes doping the work function metal layer and the gate dielectric layer with tantalum.

Growing community of inventors

Hsinchu, Taiwan

Sheng-Yung Chang