Other

Industrial Technology Research Institute

United Microelectronics Corp.

Sheng-Yueh Chang

Jian-Hong Chen

Bang-Chein Ho

Tzu-Yu Lin

Ting-Chun Liu

Jui-Fa Chang

Anseime Chen

Sung-Hsiung Wang

Ming-Chia Tai

Jun Maeda

Tai-Sheng Yeh

Wen-Yuang Tsai

The present invention provides a novel ammonium salt of an organic acid. When the salt is used as a base additive for a chemically amplified resist, the environmental stability of the resist can be enhanced, and the T-top phenomenon can be effectively prevented. In addition, the line width change caused by acid diffusion can be prevented, and the E value of the resist can be decreased.

Ammonium salt of organic acid and resist composition containing the same

The present invention relates to a polymer with at least one pericyclic protective group such as 2-methyl-2-bicyclo&lsqb;2,2,1&rsqb;heptanyl. The resist composition containing the polymer can be used as a chemically amplified resist and exhibits strong etch resistance. In addition, a line-and-space pattern of 0.1 &mgr;m pitch can be resolved successfully using the resist composition.

Polymer with a pericyclic protective group and resist composition containing the same

A substrate is provided. A first dielectric layer is formed over the substrate by deposition. Etching stop layer and a second dielectric layer are formed in turn over the first dielectric. Next, the second dielectric layer is dealt with Lewis acid. Then, a first photoresist layer is defined and formed over the second dielectric layer. And then dry etching is carried out by means of the first photoresist layer as the mask to form a via hole. The surface of the second dielectric layer and the via hole are treated with Lewis acid. Subsequently, the second photoresist layer is defined and formed on the second dielectric layer. Dry etching is proceed, and etching stop layer is as a etching terminal point to remove exposed partial surface of the second dielectric layer so as to form a trench having larger horizontal size than the via hole. Subsequently, the second photoresist layer is removed to form the opening of the damascene.

Method for avoiding photo residue in dual damascene with acid treatment

The present invention provides a cyclic dione polymer, which is a homopolymer or a copolymer of a cyclic dione monomer selected from those represented by formulae (I) and (II)

Cyclic dione polymer

The present invention provides a ring-opened polymer, which is prepared by reacting at least one pericyclic olefin elected from those represented by formulae (I) and (II) through ring-opening metathesis polymerization

Ring-opened polymer

Photosensitive composition containing a cyclic dione polymer

Growing community of inventors

Taipei, Taiwan

Sheng-Yueh Chang