Via Technologies, Inc.

Via Labs, Inc.

Asustek Computer Inc.

Sheng-Yuan Lee

Hsiao-Chu Lin

Shin-Shing Jiang

Yin-Ku Chang

Chi-Hsing Hsu

Hsing-Chou Hsu

Hsin-Kuan Wu

Long-Tai Chen

Ya-Chi Liao

A multilayer-type on-chip inductor with a conductive structure includes an insulating redistribution layer disposed on an inter-metal dielectric (IMD) layer, and first and second winding portions symmetrically arranged in the IMD layer and the insulating redistribution layer with respect to a symmetrical axis. The first and second winding portions each includes at least first and second semi-circular stacking layers arranged from the inside to the outside and in concentricity. The first and second semi-circular stacking layers each has a first trace layer in the insulating redistribution layer and a second trace layer in the IMD layer and correspondingly formed below the first trace layer. A first slit opening passes through the second trace layer and extends in the extending direction of the length of the second trace layer.

Multilayer-type on-chip inductor structure

A multilayer-type on-chip inductor includes a first winding portion arranged in an inter-metal dielectric (IMD) layer, which includes first and second semi-circular stacking layers arranged from inside to outside and in concentricity. A second winding portion includes third and fourth semi-circular stacking layers arranged symmetrically with the first semi-circular stacking layer and the second semi-circular stacking layer, respectively, with respect to a symmetry axis. A conductive branch layer is disposed in an insulating redistribution layer over the IMD layer. The first, second, third, and fourth semi-circular stacking layers each include an uppermost trace layer and a next uppermost trace layer vertically stacked under the uppermost trace layer.

A multilayer-type on-chip inductor with a conductive structure includes an insulating redistribution layer disposed on an inter-metal dielectric layer, a first spiral trace layer disposed in the insulating redistribution layer, and a second spiral trace layer disposed in the inter-metal dielectric layer correspondingly formed below the first spiral trace layer, wherein the inter-metal dielectric layer has a separating region to divide the second spiral trace layer into a plurality of line segments, and wherein each of a plurality of first slit openings and each of a plurality of second slit openings pass through a corresponding line segment, and extend in an extending direction of a length of the corresponding line segment.

An integrated circuit chip has an active surface and a chip pad arrangement on the active surface. The chip pad arrangement includes four pairs of chip pads arranged in two rows along a side edge of the active surface. Two pairs of chip pads are a first transmission differential pair chip pad and a first reception differential pair chip pad respectively. Positions of the two pairs of chip pads are not adjacent to each other and are in different rows. The other two pairs of chip pads are a second transmission differential chip pad and a second reception differential chip pad respectively. Positions of the other two pairs of chip pads are not adjacent to each other and are in different rows. In addition, a package substrate corresponding to the integrated circuit chip and an electronic assembly including the package substrate and the integrated circuit chip are also provided.

Integrated circuit chip, package substrate and electronic assembly

A multilayer-type on-chip inductor with a conductive structure includes an insulating redistribution layer disposed on an inter-metal dielectric layer, a first spiral trace layer disposed in the insulating redistribution layer, and a second spiral trace layer disposed in the inter-metal dielectric layer and correspondingly formed below the first spiral trace layer. The inter-metal dielectric layer has a separating region to divide the second spiral trace layer into line segments. First slit openings each passes through a corresponding line segment, and extends in an extending direction of a length of the corresponding line segment.

An on-chip inductor structure includes first and second winding portions symmetrically arranged in an insulating layer by a symmetrical axis. Each of the first and second winding portions includes first and second semi-circular conductive lines concentrically arranged from the inside to the outside. First and second input/output conductive portions are disposed in the insulating layer along the extending direction of the symmetrical axis, to respectively and electrically couple the first ends of the outermost semi-circular conductive lines. A conductive branch structure is disposed in the insulating layer along the symmetrical axis and between the first and second input/output conductive portions, and electrically coupled to first ends of the innermost semi-circular conductive lines. The conductive branch structure has a grounded first end and a second end is electrically coupled to a circuit and is opposite the first end of the conductive branch structure.

On-chip inductor structure

A paddle card includes a circuit board, a pad group and ground planes. The circuit board has an upper surface and a lower surface opposite to each other. The pad group is adapted to connect wires of a cable or terminals of a plug, and includes a pair of upper differential pads on the upper surface and a pair of lower differential pads on the lower surface. The pair of upper differential pads and the pair of lower differential pads are corresponding to each other respectively and configured up and down. The ground planes are spaced at intervals between the upper surface and the lower surface. The ground plane below the pair of upper differential pads has an opening corresponding thereto. A portion of the at least one ground plane between the pair of upper differential pads and the pair of lower differential pads is solid as a shield.

Paddle card and plug-cable assembly

A paddle card includes a circuit board, a pad group and first to fourth shielding planes. The circuit board has an upper surface and a lower surface opposite to each other. The pad group is adapted to connect wires of a cable or terminals of a plug, and includes a pair of upper differential pads on the upper surface and a pair of lower differential pads on the lower surface. The pair of upper differential pads is respectively configured corresponding to the pair of lower differential pads in an up and down manner. The first to fourth shielding planes are stacked at intervals between the upper and lower surfaces in sequence. An orthogonal projection of a second opening of the second shielding plane on a geometric plane that a pair of third openings of the third shielding plane is located in is separate from the pair of third openings.

A semiconductor device includes an insulating layer disposed over a substrate, wherein the insulating layer has a center region. A first winding portion and a second winding portion are electrically connected to the first winding portion, disposed in a first level of the insulating layer and surrounding the center region, wherein each of the first winding portion and the second winding portion comprises a plurality of conductive lines arranged from the inside to the outside. A first extending conductive line and a second extending conductive line partially surround the first extending conductive line, and are disposed in the first level of the insulating layer, wherein the first winding portion and the second winding portion surround the first extending conductive line and the second extending conductive line. A third extending conductive line is disposed in a second level of the insulating layer and surrounding the center region.

Semiconductor device having inductor

A semiconductor device includes first and second winding portions disposed in a first level of an insulating layer and surrounding a center region thereof. Each of the winding portions includes conductive lines arranged from the inside to the outside. First and second extending conductive lines are disposed in the first level of the insulating layer. A third extending conductive line is disposed in a second level of the insulating layer. The first extending conductive line is coupled between the innermost conductive line of the second winding and the third extending conductive line. The second extending conductive line is coupled between the innermost conductive line of the first winding portion and the third extending conductive line. The first extending conductive line and the third extending conductive line coupled thereto are arranged in a helix or a spiral spatial configuration.

A transmittal system including an extension device, a connection device, and an impedance device is disclosed. The extension device includes a first connection port and is coupled to a peripheral device. The connection device includes a second connection port and a third connection port. The second connection port is coupled to the first connection port. The third connection port is coupled to an electronic device. The impedance device connects at least one of the first, the second and the third connection ports to ground.

Transmittal system and connection device

A semiconductor device including a first insulating layer and a second insulating layer sequentially disposed on a substrate having a center region. The semiconductor device includes a first winding portion and a second winding portion disposed in the second insulating layer and surrounding the center region A second conductive line and a third conductive line are arranged from the inside to the outside. In addition, each of the first, second and third conductive lines has a first end and a second end. The semiconductor device also includes a coupling portion disposed in the first and second insulating layers between the first and second winding portions, and having a first pair of connection layers cross-connecting the second ends of the first and second conductive lines, and a second pair of connection layers cross-connecting the first ends of the second and third conductive lines.

The invention provides an integrated circuit device. The integrated circuit device includes a substrate. A first capacitor is disposed on the substrate. A first metal pattern is coupled to a first electrode of the first capacitor. A second metal pattern is coupled to a first electrode of the second capacitor. A third metal pattern is disposed over the first and second metal patterns. The third metal pattern covers the first capacitor, the first metal pattern, and the second metal pattern. The third metal pattern is electrically grounded. An inductor is disposed over the third metal pattern.

Integrated circuit device

The invention provides an integrated circuit device. The integrated circuit device includes a substrate. A first capacitor is disposed on the substrate. A first metal pattern is coupled to a first electrode of the first capacitor. A second metal pattern is coupled to a first electrode of the second capacitor. A third metal pattern is disposed over the first and second metal patterns. The third metal pattern covers the first capacitor, the first metal pattern and the second metal pattern. The third metal pattern is electrically grounding. An inductor is disposed over the third metal pattern.

A pin arrangement adapted to a FPC connector is provided. The pin arrangement includes a pin lane. The pin lane includes a pair of ground pins, a pair of differential pins and at least one not-connected (NC) pin. The differential pins are located between the pair of ground pins. The at least one NC pin is located between the pair of differential pins or between one of the pair of ground pins and one of the pair of differential pins adjacent thereto. By adding the at least one NC pin between the pair of differential pins and/or between the differential pin and the ground pin adjacent thereto, a distance between each of the pair of the differential pins and/or between the differential pin and the ground pin is increased, and thus a differential characteristic impedance of the pair of differential pins is raised to reduce the impact of impedance mismatch.

Growing community of inventors

Taipei, Taiwan

Sheng-Yuan Lee