United Microelectronics Corp.

Sheng-Wei Hung

Tsong-Lin Shen

Chin-Tsai Chang

Yu-Chih Chuang

Min-Hung Wang

Chien-Chung Su

Chih-Cheng Wang

Chen-Hsiao Wang

Hui-Lung Chou

A method for fabricating a semiconductor device is disclosed. A semiconductor substrate comprising a MOS transistor is provided. A MEMS device is formed over the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

Method for fabricating MEMS device integrated with a semiconductor integrated circuit

A semiconductor device includes a semiconductor substrate comprising a MOS transistor. A MEMS device is integrally constructed above the MOS transistor. The MEMS device includes a bottom electrode in a second topmost metal layer, a diaphragm in a pad metal layer, and a cavity between the bottom electrode and the diaphragm.

MEMS device integrated with a semiconductor integrated circuit and manufacturing method thereof

A semiconductor chip is provided. The semiconductor chip includes at least one interlayer dielectric layer, a transmission pattern and a stress absorption structure. The at least one interlayer dielectric layer is disposed on a substrate. The transmission pattern is disposed on the at least one interlayer dielectric layer and within a peripheral region of the semiconductor chip. The transmission pattern is electrically connected to an external signal source. The stress absorption structure is disposed in the at least one interlayer dielectric layer within the peripheral region, and electrically connected to the transmission pattern. The stress absorption structure is covered by the transmission pattern.

Semiconductor chip

Growing community of inventors

Taipei, Taiwan

Sheng-Wei Hung