Taiwan Semiconductor Manufacturing Comp. Ltd.

Sheng-Min Chuang

Tsung-Pao Chen

Teng-Kuei Chuang

A photoresist composition and a method for forming a patterned photoresist, and a method for forming an integrated circuit pattern are provided. A photoresist composition is provided. The photoresist composition includes a first polymer, a second polymer; and a solvent. The first polymer is more soluble than the second polymer in an aqueous solution, and the first polymer has a higher etching resistance than the second polymer.

Photoresist composition to reduce photoresist pattern collapse

A tool and a method of lithography are provided. In various embodiments, the method of lithography includes forming a photoresist layer on a substrate. The method further includes exposing the photoresist layer to form an exposed photoresist layer. The method further includes rinsing the exposed photoresist layer. The method further includes treating the exposed photoresist layer with a chemical modifier to form a modified photoresist layer. The method further includes baking the modified photoresist layer. The method further includes developing the modified photoresist layer.

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Taichung, Taiwan

Sheng-Min Chuang