National Applied Research Laboratories

National Chip Implementation Center National Applied Research Laboratories

National Chip Implementation Center

National Applied Research Laboratories National Chip International Center

Sheng-Hsiang Tseng

Ying-Zong Juang

Chin-Fong Chiu

Hann-Huei Tsai

Chen-Fu Lin

Fu-Yuan Xiao

Hann Huei Tsai

You-Liang Lai

Yi-Jen Wang

Ying Zong Juang

The present invention discloses a monolithic z-axis torsional CMOS MEMS accelerometer, it includes a matching frame, two anchors, a first comb structure, a second comb structure and a proof mass. With the implementation of the present invention, the capacitance sensitivity of Z+ direction and Z&#x2212; direction sensing signals by the accelerometer can be improved. On the other hand, due to the feasibility of applying micromachining etch processes from the top side, the ease and the yield of production are both promoted.

Monolithic z-axis torsional CMOS MEMS accelerometer

A CMOS-MEMS switch structure is disclosed. The CMOS-MEMS switch structure includes a first substrate, a second substrate, a first cantilever beam, and a second cantilever beam. The first and second substrates are positioned opposite each other. The first cantilever beam is provided on the first substrate, extends from the first substrate toward the second substrate, and bends downward. Likewise, the second cantilever beam is provided on the second substrate, extends from the second substrate toward the first substrate, and bends downward. The first and second substrates are movable toward each other to connect a first top surface of the first cantilever beam and a second top surface of the second cantilever beam, and away from each other so that the first top surface of the first cantilever beam and the second top surface of the second cantilever beam are disconnected, thereby closing or opening the CMOS-MEMS switch structure.

CMOS-MEMS switch structure

The present invention discloses a CMOS-MEMS cantilever structure. The CMOS-MEMS cantilever structure includes a substrate, a circuit structure, and a cantilever beam. The substrate has a circuit area and a sensor unit area defined thereon. The circuit structure is formed in the circuit area. The cantilever beam is disposed in the sensor unit area with one end floating above the substrate and the other end connecting to the circuit structure. With the above arrangement, the manufacturing process of CMOS-MEMS cantilever structure of this invention can be simplified. Furthermore, the structure of the cantilever beam is thinned down and therefore has a higher sensitivity.

CMOS-MEMS cantilever structure

Simple but practical methods to dice a CMOS-MEMS multi-project wafer are proposed. On this wafer, micromachined microstructures have been fabricated and released. In a method, a photoresist is spun on the full wafer surface, and this photoresist is thick enough to cover all cavities and structures on the wafer, such that the photoresist will protect the released structures free from the chipping, vibrations, and damages in the diamond blade dicing process. In another method, a laser dicing system is utilized to scribe the multi-project wafer placed on a platform, and by precisely controlling the platform moving-track, the dicing path can be programmed to any required shape and region, even it is not straight. In addition, the wafer backside is mounted on a blue-tape at the beginning to enhance the process reliability.

Methods for dicing a released CMOS-MEMS multi-project wafer

Growing community of inventors

Hsinchu, Taiwan

Sheng-Hsiang Tseng