Beijing Sinoma Synthetic Crystals Co., Ltd.

Sinoma Synthetic Crystals Co., Ltd.

Shen Dang

Xu Zhang

Xun Qian

Peng Zi

The present application provides a long-wave infrared anti-reflection protective film on a ZnS substrate and a preparation method thereof, wherein the ZnS substrate long-wave infrared anti-reflection protective film comprises a ZnS film layer and a YOfilm layer sequentially arranged on the ZnS substrate. The ZnS substrate has a thickness of 2-15 mm, and the ZnS film layer has a thickness of 80-120 nm, the YOfilm layer has a thickness of 1000-1300 nm, and a film structure of YOlayer gradually changes from an inside to a surface. The method for preparing a long-wave infrared anti-reflection protective film on a ZnS substrate comprises the following steps: 1) performing a polishing treatment and surface treatment on the ZnS substrate; 2) depositing a ZnS film layer on the ZnS substrate; 3) depositing a YOfilm layer on the ZnS film.

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Beijing, China

Shen Dang