General Electric Company

Massachusetts Institute of Technology

Ge Homeland Protection, Inc.

Sheila Tandon

Anil Raj Duggal

Christopher Fred Keimel

Glenn Scott Claydon

Bastiaan Arie Korevaar

Anis Zribi

Sandip Maity

Stacey Joy Kennerly

Min Yan

Ahmet Gun Erlat

Todd Ryan Tolliver

Shivappa Ningappa Goravar

Ayan Banerjee

Long Que

Brian Joseph Scherer

David Cecil Hays

Leslie Kolodziejski

Gale Petrich

Svetlana Rogojevic

Shankar (nmn) Chandrasekaran

Disclosed is a method relating to graded-composition barrier coatings comprising first and second materials in first and second zones. The compositions of one or both zones vary substantially continuously across a thickness of the zone in order to achieve improved properties such as barrier, flexibility, adhesion, optics, thickness, and tact time. The graded-composition barrier coatings find utility in preventing exposure of devices such as organic electro-luminescent devices (OLEDs) to reactive species found in the environment.

Method for making a graded barrier coating

A method of forming a buried oxide/crystalline III-V semiconductor dielectric stack is presented. The method includes providing a substrate and forming a layered structure on the substrate comprising of layers of different materials, one of the different materials is selected to be an oxidizable material to form one or more buried low index oxide layers. A first sequence of oxidizing steps are performed on the layered structure by exposing the edges of the layered structure to a succession of temperature increases in the presence of steam from an initial temperature to the desired oxidation temperature for a time interval equal to the sum of the time intervals of the succession of temperature increases. Also, the method includes performing a second sequential oxidizing step with steam on the layered structure at the specific oxidation temperature for a specific time interval. Furthermore, the method includes performing a final sequence of oxidizing steps on the structure by ramping down from the desired oxidation temperature to a final temperature when the oxidizing material is completely oxidized to form the one or more buried low index oxide layers.

Integration of buried oxide layers with crystalline layers

A method of monolithically interconnecting electrical devices that isolates and interconnects the contacts of neighboring electrical devices such as thin film PV cells, without damaging the surrounding materials.

Monolithically connected photovoltaic devices on flexible substrates

A photonic crystal based collection probe is provided. The probe includes a photonic crystal configured to guide and condition a beam of Raman scattered photons. Further, the device includes a spectrograph in optical communication with the photonic crystal and configured to receive Raman scattering from the photonic crystal. The device may be employed in a Raman spectrometer system.

Collection probe for use in a Raman spectrometer system and methods of making and using the same

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Niskayuna, NY, United States of America

Sheila Tandon