Taiwan Semiconductor Manufacturing Comp. Ltd.

Shao-An Wang

Lin-Yu Huang

Sung-Li Wang

Chia-Hung Chu

Sheng-Tsung Wang

Yi-Hsiu Chen

Po-Chin Chang

Hung-Yi Huang

Kenichi Sano

Kan-Ju Lin

Pinyen Lin

Yuting Cheng

Tzu-Pei Chen

Harry Chien

Chih-Shiun Chou

A method for filling a gap in a semiconductor structure includes: forming the gap between two raised portions of the semiconductor structure, the gap having a bottom surface and two lateral surfaces each extending upwardly from the bottom surface along one of the raised portions to terminate at an upper surface of a corresponding one of the raised portions; and forming a filler element in the gap in a bottom-up manner that avoids the filler element being formed laterally.

Gap filling method in semiconductor manufacturing process

A method for manufacturing a semiconductor device includes forming a conductive feature in a first dielectric layer; forming a second dielectric layer on the first dielectric layer; forming a trench that penetrates through the second dielectric layer, and terminates at the conductive feature; forming a contact layer in the trench and on the conductive feature; etching back the contact layer to form a first via contact feature in the trench, the first via contact feature being electrically connected to the conductive feature; and forming a second via contact feature on the first via contact feature in the trench.

Semiconductor device including stacked via contact and method for manufacturing the same

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Hsinchu, Taiwan

Shao-An Wang