Applied Materials, Inc.

Shankar Venkataranan

Li-Qun Xia

Ellie Y Yieh

Son Truong Nguyen

Scott A Hendrickson

Inna Shmurun

Bang C Nguyen

Paul Edward Gee

Francimar Campana

Dana Tribula

The present invention relates to the deposition of dielectric layers, and more specifically to a method and apparatus for forming dielectric layers such as borophosphosilicate glass (BPSG) having improved film uniformity, higher deposition rate, superior gap fill/reflow capability, and smoother surface morphology. The method forms a dielectric layer with a process using helium carrier gas that produces substantially less downstream residue than conventional methods and apparatus, thereby reducing the need for chamber cleaning and increasing throughput of processed wafers. The present invention utilizes helium instead of nitrogen as carrier gas in a process for forming a dielectric layer such as BPSG to provide various unexpected benefits. According to one aspect, the present invention forms a dielectric film on a substrate, and prolongs a period between chamber cleanings in a system by using helium which produces substantially less downstream and upstream residue than a process using nitrogen. The method includes introducing a process gas containing silicon, oxygen, and first dopant atoms into the chamber; using helium as the carrier gas in the system; and processing more substrates between cleanings than a process using nitrogen as carrier gas. A further aspect of the invention includes annealing the dielectric films formed on the substrates at a lower temperature than required by the process using nitrogen as carrier gas.

Method and apparatus for forming a dielectric film using helium as a carrier gas

There are provided a method and apparatus for forming by chemical vapor deposition on large diameter (e.g., 300 mm) semiconductive wafers thin insulating layers of silicon oxide (SiO,) having high uniformity from rim to rim across any diameter through the centers of the wafers. Such high degree of uniformity of the layers is obtained by directing separately a first reactive gas stream and a second reactive gas stream into close proximity to an exposed surface of a wafer to a be coated by the gasses with an insulating layer, the gas streams when mixed together reacting with each other to deposit an insulating layer on a wafer; forming a whirlpool-like swirling mixture of the first and second gas streams to thoroughly mix together the gasses thereof; forming a highly uniform mixture of the reactive gasses; and promptly flowing the mixture of reactive gasses over and upon the surface of the wafer. The apparatus also provides dual wafer processing chamber cavities.

Method and apparatus for processing semiconductive wafers

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Santa Clara, CA, United States of America

Shankar Venkataranan