Texas Instruments Corporation

Shangting Detweiler

Richard L Guldi

Chris D Atkinson

Basab Chatterjee

James B Friedmann

Brian M Trentman

In accordance with the invention, there are semiconductor devices and methods of making semiconductor devices and holes. The method of making a semiconductor device can comprise forming a photoresist layer over a surface of a wafer, wherein the wafer comprises an edge that has a substantially rounded profile, an array of dies, and at least one edge die. The method can also comprise dividing a shot area into a plurality of shot portions and assigning a blind ID to each of the plurality of shot portions. The method can further comprise identifying one or more edge shot portions on the edge of the wafer for additional exposure; and exposing one or more times identified one or more edge shot portions on the edge of the wafer and blocking non-identified one or more non-edge shot portions.

By-die-exposure for patterning of holes in edge die

A silicon rich anti-reflective coating () is formed on a layer () in which narrow linewidth features are to be formed. Prior to the formation of a photoresist layer (), the anti-reflecting coating () is exposed to excited oxygen species to reduce photoresist poisoning.

Method to reduce photoresist poisoning

According to one embodiment of the present invention, a method of forming a semiconductor device includes forming a photoresist layer on a surface of a wafer. The wafer includes an array of die that includes a plurality of complete die and at least one partial edge die. The wafer has an edge that has a substantially rounded profile causing undersized patterns in semiconductor devices formed on partial edge die. A first exposure intensity is assigned to a first group of die on the surface of the wafer. The first group of die includes a group of complete die, and the first exposure intensity is assigned based at least in part on the location of the first group of die on the surface of the wafer. A second exposure intensity is assigned to a second group of die on the surface of the wafer. The second group of die includes at least one partial edge die. The second exposure intensity less than the first exposure intensity to compensate for reduced line width due to the wafer edge topography. Energy is directed at the second group of die at the second exposure intensity to avoid over-exposure of the second group of die.

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Dallas, TX, United States of America

Shangting Detweiler