Applied Materials, Inc.

Shan Tang

Rajesh Prasad

Qi Gao

Karthik Janakiraman

Martin Jay Seamons

Deven Raj Mittal

Kyuha Shim

Gautam K Hemani

Exemplary methods of semiconductor processing may include forming a layer of amorphous silicon on a semiconductor substrate. The layer of amorphous silicon may be characterized by a first amount of hydrogen incorporation. The methods may include performing a beamline ion implantation process or plasma doping process on the layer of amorphous silicon. The methods may include removing hydrogen from the layer of amorphous silicon to a second amount of hydrogen incorporation less than the first amount of hydrogen incorporation.

Ion implantation for reduced hydrogen incorporation in amorphous silicon

A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200&#xb0; C. to 550&#xb0; C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200&#xb0; C. to 550&#xb0; C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

Techniques for improved low dielectric constant film processing

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Middleton, MA, United States of America

Shan Tang