Applied Materials, Inc.

Shamik Patel

Mehul B Naik

Bok Hoen Kim

Thomas E Nowak

Nagarajan Rajagopalan

Ji Ae Park

Ran Ding

Ryan Yamase

Li-Qun Xia

Sesh Ramaswami

Jim Baldino

Xinhai Han

Heung Lak Park

Zhengjiang “David” Cui

A method of forming a passivation layer comprising silicon nitride on features of a substrate is described. In a first stage of the deposition method, a dielectric deposition gas, comprising a silicon-containing gas and a nitrogen-containing gas, is introduced into the process zone and energized to deposit a silicon nitride layer. In a second stage, a treatment gas, having a different composition than that of the dielectric deposition gas, is introduced into the process zone and energized to treat the silicon nitride layer. The first and second stages can be performed a plurality of times.

Silicon nitride passivation layer for covering high aspect ratio features

A through-silicon via fabrication method includes etching a plurality of through holes in a silicon plate. An oxide liner is deposited on the surface of the silicon plate and on the sidewalls and bottom wall of the through holes. A metallic conductor is then deposited in the through holes. In another version, which may be used concurrently with the oxide liner, a silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate.

Fabrication of through-silicon vias on silicon wafers

A through-silicon via fabrication method comprises forming a substrate by bonding the front surface of a silicon plate to a carrier using an adhesive layer therebetween to expose the back surface of the silicon plate. A silicon nitride passivation layer is deposited on the exposed back surface of the silicon plate of the substrate. A plurality of through holes are etched in the silicon plate, the through holes comprising sidewalls and bottom walls. A metallic conductor is deposited in the through holes to form a plurality of through-silicon vias.

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Redlands, CA, United States of America

Shamik Patel