Samsung Electronics Co., Ltd.

Samsung Sdi Co., Inc.

Seungwoo Jang

Jooho Lee

Younggeun Park

Jeongil Bang

Hyosik Mun

Jin-Hee Bae

Kunbae Noh

Taeksoo Kwak

Jaeho Lee

Yong-hee Cho

Jun Sakong

Byeonggyu Hwang

Chungheon Lee

Wanhee Lim

Hyeonsu Jo

Euihyun Kim

Myungho Kang

A semiconductor memory device includes a bit line, a channel pattern including a horizontal channel portion on the bit line and a vertical channel portion vertically protruding from the horizontal channel portion, a word line on the horizontal channel portion and on a sidewall of the vertical channel portion, and a gate insulating pattern between the word line and the channel pattern. The channel pattern includes an oxide semiconductor and includes first, second, and third channel layers sequentially stacked. The first to third channel layers include a first metal, and the second channel layer further includes a second metal different from the first metal. At least a portion of the first channel layer contacts the bit line.

Semiconductor memory device

Provided are a composition for forming a silica layer including a silicon-containing polymer and a solvent, wherein when adding 70 g of the composition for forming the silica layer to a 100 ml container, leaving it at 40° C. for 28 days, and taking 1 ml of gas generated from the composition, 1 ml of the gas includes hydrogen gas (H), silane gas (SiH), and ammonia gas (NH), and the hydrogen gas, silane gas, and ammonia gas satisfy Equation 1: [(hydrogen gas amount (ppm))/(silane gas amount (ppm)+ammonia gas amount (ppm))≥1.5], a silica layer manufactured therefrom, and an electronic device including the silica layer.

Composition for forming silica layer and silica layer

A semiconductor device includes a first electrode; a second electrode which is apart from the first electrode; and a dielectric layer between the first electrode and the second electrode. The dielectric layer may include a base material including an oxide of a base metal, the base material having a dielectric constant of about 20 to about 70, and co-dopants including a Group 3 element and a Group 5 element. The Group 3 element may include Sc, Y, B, Al, Ga, In, and/or Tl, and the Group 5 element may include V, Nb, Ta, N, P, As, Sb, and/or Bi.

Semiconductor device and semiconductor apparatus including the same

A capacitor includes a lower electrode, a first dielectric layer provided on the lower electrode including a perovskite structure, an upper electrode including a perovskite structure, a first dielectric layer between provided on the lower electrode and the upper electrode; and a second dielectric layer, having a band gap energy greater than that of the first dielectric layer, provided between on the first dielectric layer and the upper electrode, the capacitor may have a low leakage current density and stable crystallinity, thereby suppressing a decrease in a dielectric constant.

Capacitor including perovskite material, semiconductor device including the capacitor, and method of manufacturing the capacitor

Disclosed is a composition for forming a silica layer including perhydropolysilazane (PHPS) and a solvent, wherein in anH-NMR spectrum of the perhydropolysilazane (PHPS) in CDCl, when a peak derived from NSiHand NSiHis referred to as Peak 1 and a peak derived from NSiHis referred to as Peak 2, a ratio (P/(P+P)) of an area (P) of Peak 1 relative to a total area (P+P) of the Peak 1 and Peak 2 is greater than or equal to 0.77, and when an area from a minimum point between the peaks of Peak 1 and Peak 2 to 4.78 ppm is referred to as a Region B and an area from 4.78 ppm to a minimum point of Peak 1 is referred to as a Region A of the area of Peak 1, a ratio (P/P) of an area (P) of Region A relative to an area (P) of Region B is greater than or equal to about 1.5.

Composition for forming silica layer, silica layer and electronic device incorporating silica layer

Growing community of inventors

Suwon-si, South Korea

Seungwoo Jang