Asm IP Holding B.v.

SeungJu Chun

YoonKi Min

Atsuki Fukazawa

Dai Ishikawa

Eiichiro Shiba

Shinya Ueda

Taishi Ebisudani

JongWan Choi

SeYong Kim

YongMin Yoo

YoungHoon Kim

HakJoo Lee

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si&#x2014;N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Method for forming silicon nitride film selectively on top/bottom portions

Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.

Substrate processing system

Method for forming silicon nitride film selectively on top surface

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si&#x2014;N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

Growing community of inventors

Chungcheongnam-do, South Korea

SeungJu Chun