Samsung Electronics Co., Ltd.

Boston University

Seungbeom Park

Myungjun Lee

Jaehyeon Son

Taewan Kim

Jaehwang Jung

Kyungwon Yun

Sungmin Park

Taejoong Kim

Wookrae Kim

Junho Shin

Youngkyu Park

Hao Wang

Hojun Lee

Kijoo Hong

Lei Tian

Jangwoon Sung

Seunghwa Hyun

Heejun Ahn

Jiabei Zhu

A substrate inspection apparatus includes a light irradiator including an objective lens and a plurality of optical fibers. The objective lens is configured to irradiate light to an illumination area on a semiconductor substrate having a plurality of circuit pattern layers, the plurality of optical fibers are adjacent a periphery of the objective lens and are configured to irradiate the light to a peripheral area adjacent the illumination area. A light generator is configured to generate the light. The light generator is configured to change an irradiation angle of the light to selectively irradiate the light to one or more of the objective lens and the plurality of optical fibers. A light analyzer is configured to obtain images of the circuit pattern layers from the light reflected from the illumination area and the peripheral area. The light analyzer is configured to model each of the circuit pattern layers of the semiconductor substrate to obtain image models and to measure an overlay between the circuit pattern layers through the images and the image models.

Substrate inspection apparatus and substrate inspection method

A wafer processing apparatus includes an X-θ stage unit having a rotary chuck capable of moving in an X direction and rotating in a θ direction, wherein a wafer is mounted on the rotary chuck and the wafer includes an edge portion adjacent to an edge of the wafer. In addition, the wafer processing apparatus includes: an edge bead removal (EBR) measurement and eccentricity measurement unit which is capable of inspecting a bead removal state of the edge portion of the wafer, and measuring eccentricity between the center of the rotary chuck and the center of the wafer; and an edge exposure of wafer (EEW) process unit which exposes the edge portion of the wafer after correcting the eccentricity between the center of the rotary chuck and the center of the wafer measured by the EBR measurement and eccentricity measurement unit.

Wafer processing apparatus

Provided is a holographic microscope including an input optical system configured to emit polarized input beam, a first beam splitter configured to emit an object beam by reflecting a portion of the polarized input beam, and emit a reference beam by transmitting a remaining portion of the polarized input beam, a reference optical system configured to separate the reference beam into a first reference beam and a second reference beam, a camera configured to receive the first reference beam and the second reference beam and the object beam that is reflected by an inspection object, the camera including a micro polarizer array, wherein a first polarization axis of the first reference beam is perpendicular to a second polarization axis of the second reference beam.

Holographic microscope and manufacturing method of semiconductor device using the same

A super-resolution holographic microscope includes a light source configured to emit input light, a diffraction grating configured to split the input light into first diffracted light and second diffracted light, a mirror configured to reflect the first diffracted light, a wafer stage arranged on an optical path of the second diffracted light and on which a wafer is configured to be arranged, and a camera configured to receive the first diffracted light that is reflected by the mirror and the second diffracted light that is reflected by the wafer to generate a plurality of hologram images of the wafer.

Super-resolution holographic microscope

An inspection apparatus includes: a light source that generates and outputs light; a stage on which an inspection target is arranged; an irradiation optical system that irradiates light from the light source to the inspection target; a detector that receives the light diffracted from the inspection target and generates diffraction image; and a detector moving device configured to move the detector on a z-axis, which is an optical axis of the light, and an x-y plane perpendicular to the z-axis. Furthermore, while the detector moves on the x-y plane and the z-axis through the detector moving device, the detector generates a plurality of the diffraction images with different positions on the x-y plane and the z-axis with respect to the inspection target, and thus simultaneously implements phase retrieval and super resolution of diffraction images.

Inspection apparatus and method based on coherent diffraction imaging (CDI)

Growing community of inventors

Gwangju, South Korea

Seungbeom Park