Asm IP Holding B.v.

Seung Hwan Lee

Ju Hyuk Park

Seung Woo Choi

Jong Su Kim

Hak Yong Kwon

Sung Bae Kim

A substrate processing method capable of stably loading a substrate regardless of a variation in pressure of a reaction space includes supplying an inert gas; and forming a thin film by sequentially and repeatedly supplying a source gas, supplying a reaction gas, and activating the reaction gas, wherein a center portion of a substrate and a center portion of a susceptor are spaced apart from each other to form a separate space, the reaction space above the substrate and the separate space communicate with each other via one or more channels, an inert gas is introduced to the separate space through the one or more channels during the supplying of the inert gas, and the inert gas prevents pressure imbalance between the separate space and the reaction space during a thin film deposition process.

Growing community of inventors

Anseong-si, South Korea

Seung Hwan Lee