Lg Chem, Ltd

Seung-Beom Cho

Myoung-hwan Oh

Jong-Pil Kim

Jang-Yul Kim

Jun-seok Nho

Sang-Soon Choi

Dong-Mok Shin

Tae-Hyun Kwon

Eun-Mi Choi

Jun-Yeon Cho

Min-Jin Ko

Hye-Jeong Hong

Dae-Gon Han

Hyun-Chul Ha

Jun-Seok Noh

Kwang-Hee Lee

Ick-Soon Kwak

Jun-Seok Nho

Chang-Seok Ryoo

Myoung-Hwan Oh

Gi-Ra c/o Lg Chem Research Park Yi

Chang-Bum Ko

Kwang-Ik Moon

Jung-Hee c/o Lg Chem Research Park Lee

Soon-Ho Jang

Jung-Hee Lee

Gi-Ra Yi

The present invention relates to a slurry for chemical mechanical polishing, comprising an abrasive; an oxidant; an organic acid; and a polymeric additive comprising polyolefin-polyalkyleneoxide copolymer, wherein the polyolefin-polyalkyleneoxide copolymer comprises a polyolefin repeat unit and two or more polyalkyleneoxide repeat units, and at least one polyalkyleneoxide repeat unit is branched.

Slurry for chemical mechanical polishing

The present invention relates to a CMP slurry that is able to reduce dishing generation, when it is applied to polishing or planarization of silicon oxide layer, for example, and a polishing method. The CMP slurry includes a polishing abrasive, a linear anionic polymer, a compound including a phosphoric acid group, and water, and the ratio of CMP polishing speed to a silicon oxide layer: CMP polishing speed to a silicon nitride layer is 30:1 to 50:1.

CMP slurry and a polishing method using the same

The present invention relates to a CMP slurry composition comprising an abrasive particle; a dispersant; an ionic polymer additive; and a non-ionic polymer additive including a polyolefin-polyethylene glycol copolymer including at least two polyethylene glycol repeat unit as a backbone and at least a polyethylene glycol repeating unit as a side chain, and a polishing method with using the slurry composition. The CMP slurry composition shows a low polishing rate to a single-crystalline silicon layer or a polysilicon layer and a high polishing rate to a silicon oxide layer, resulting in having an excellent polishing selectivity.

Slurry composition for CMP, and polishing method

Disclosed is a method for preparing cerium carbonate that can prepare cerium carbonate having uniform crystal structure, shape and size with high productivity. The method for preparing cerium carbonate comprises: continuously introducing a reaction solution comprising cerium precursor and urea in a tubular reactor including an inlet, an outlet, and one or more reaction tubes through the inlet; reacting the cerium precursor with urea at an elevated temperature in the reaction tube; and, continuously discharging cerium carbonate formed by the reaction of the cerium precursor and urea to the outlet.

Method for preparing cerium carbonate

The present invention relates to crystalline cerium oxide prepared in a simple, economical, and efficient manner, of which crystal structure, shape, and size can be easily adjusted and that exhibits excellent polishing properties, and a preparation method thereof. The crystalline cerium oxide can be prepared as sub-micron crystalline cerium oxide that has a mean volume diameter and a diameter standard deviation within a predetermined range.

Crystalline cerium oxide and preparation method of the same

Disclosed is a method for preparing cerium carbonate that can improve yield or productivity of cerium carbonate and enables preparation of cerium carbonate having uniform diameter, cerium carbonate, and a method for preparing cerium oxide. The method for preparing cerium carbonate comprises mixing the cerium precursor with urea; and, elevating the temperature of the mixture to 50&#xb0; C. or more in the absence of a separate reaction medium to react the cerium precursor with urea in the presence of a polymer dispersant.

Method for preparing cerium carbonate and cerium oxide

Disclosed is cerium oxide powder for a CMP abrasive, which can improve polishing selectivity of a silicon oxide layer to a silicon nitride layer and/or within-wafer non-uniformity (WIWNU) during chemical mechanical polishing in a semiconductor fabricating process. More particularly, the cerium oxide powder is obtained by using cerium carbonate having a hexagonal crystal structure as a precursor. Also, CMP slurry comprising the cerium oxide powder as an abrasive, and a shallow trench isolation method for a semiconductor device using the CMP slurry as polishing slurry are disclosed.

Cerium oxide powder, method for preparing the same, and CMP slurry comprising the same

The present invention relates to a method for preparing cerium oxide which enables preparation of cerium oxide showing improved polishing performance, cerium oxide prepared therefrom, and CMP slurry comprising the same. The method for preparing cerium oxide comprises the step of contacting cerium oxide with primary alcohol to increase specific surface area of the cerium oxide 10% or more.

Method for preparing cerium oxide, cerium oxide prepared therefrom and CMP slurry comprising the same

Disclosed are cerium oxide powder for an abrasive; CMP slurry including the same; and a shallow trench isolation (STI) process using the CMP slurry. At least two kinds of cerium oxides prepared by using cerium carbonates having different crystal structures are mixed in an appropriate ratio and used as an abrasive for CMP slurry, thereby adjusting required polishing properties of the CMP slurry. Also, in a disclosed method of preparing a cerium carbonate, the crystal structure of the cerium carbonate can be easily controlled. Based on the finding that in a cerium oxide for an abrasive, the kind of improved polishing property depends on the crystal structure of a cerium carbonate, at least one from among polishing properties, such as the polishing rate of a silicon oxide layer, the polishing rate of a silicon nitride layer, the polishing selectivity between the silicon oxide layer and the silicon nitride layer, and WIWNU, can be adjusted by using at least two kinds of cerium oxides selected from the group including (i) a cerium oxide prepared by using a lanthanite-(Ce) crystal structured cerium carbonate, (ii) a cerium oxide prepared by using an orthorhombic crystal structured cerium carbonate, and (iii) a cerium oxide prepared by using a hexagonal crystal structured cerium carbonate, as an abrasive for CMP slurry, and adjusting the mixing ratio of the cerium oxides.

Cerium oxide powder for abrasive and CMP slurry comprising the same

The present invention relates to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same, and more particularly, to a method of preparing a cerium oxide powder for a CMP slurry and a method of preparing a CMP slurry using the same in which the specific surface area of the powder is increased by preparing a cerium precursor, and then decomposing and calcinating the prepared cerium precursor. The pore distribution is controlled to increase the chemical contact area between a polished film and a polishing material, thereby reducing polishing time while the physical strength of powder is decreased, which remarkably reduces scratches on a polished film.

Method for preparing of cerium oxide powder for chemical mechanical polishing and method for preparing of chemical mechanical polishing slurry using the same

In a method for preparing cerium carbonate powder by mixing a cerium precursor solution with a urea solution and carrying out a precipitation reaction, wherein the cerium carbonate powder has a hexagonal crystal structure, by using at least one type of organic solvent as a solvent for either or both the cerium precursor solution and the urea solution, and adjusting temperature of the precipitation reaction within a range of 120&#xb0; C. to 300&#xb0; C. Also, the method can yield cerium carbonate powder, cerium oxide powder from the cerium carbonate powder, and CMP slurry including the cerium oxide powder as an abrasive. In the method, urea as a precipitant can improve the uniformity of a reaction, and thus it is possible to easily and inexpensively obtain cerium carbonate powder with a hexagonal crystal structure without the danger by high-temperature high-pressure and the need for an expensive system in hydrothermal synthesis.

Method for preparing cerium carbonate powder using urea

The present invention relates to a method for preparing cerium carbonate which enables preparation of hexagonal cerium carbonate by a simplified process, a cerium carbonate powder prepared thereby, and a method for preparing a cerium oxide powder using the same. The method for preparing cerium carbonate comprises the step of contact-reacting orthorhombic cerium carbonate with a primary alcohol aqueous solution comprising water and primary alcohol at a weight ratio of 1:0.1 or more at a temperature of 160&#xb0; C. or more to form hexagonal cerium carbonate.

Disclosed is a method for directly preparing cerium oxide powder in a solution phase by a) mixing a cerium precursor solution with a precipitant solution to cause a reaction; and b) performing oxidation treatment of the reacted solution, wherein at least one kind of pure organic solvent containing no water is used as a solvent for the cerium precursor solution as well as the precipitant solution to thereby prepare the cerium oxide powder, the particle size of which is adjusted to 50 nm to 3 &#x3bc;m. Cerium oxide powder obtained from the method and CMP slurry comprising the cerium oxide powder as a polishing agent are also disclosed. The method makes it possible to prepare cerium oxide powder with an average particle size of 50 nm or greater and high crystallinity, which is difficult to prepare by the conventional wet precipitation process, by using an organic solvent as a solvent in a wet precipitation process, and the so-prepared cerium oxide powder can be used as a polishing agent for CMP slurry even without being subjected to separate heat treatment.

Method for preparing cerium oxide powder using organic solvent and CMP slurry comprising the same

Disclosed is CMP slurry, which includes a pyridine-based compound including at least two pyridinyl groups, and minimizes the occurrence of dishing and erosion of a wiring line.

CMP slurry composition for forming metal wiring line

The present invention relates to cerium oxide powder and a process for producing the same. The cerium oxide powder of the invention, which is produced by mixing a cerium source such as cerium oxide, cerium hydroxide and cerium carbonate with an alkali metal compound, as flux, and performing high temperature treatment, may have a variety particle size while having spherical shape.

Growing community of inventors

Daejeon, South Korea

Seung-Beom Cho