Samsung Electronics Co., Ltd.

Seul Ha Myung

Chan Hoon Park

Jong Woo Sun

Je Woo Han

Seung Yoon Song

Jung Mo Sung

Kyung Hoon Lee

Jae Hyun Lee

Hyo Sung Kim

Min Joon Park

A semiconductor processing apparatus includes a chamber housing, an electrostatic chuck disposed in the chamber housing, the electrostatic chuck being configured to hold a semiconductor wafer, an edge ring surrounding the electrostatic chuck, the edge ring including a ring electrode disposed within the edge ring, and a ring voltage supply configured to supply a ring voltage to the ring electrode, the ring voltage having a non-sinusoidal periodic waveform, wherein each period of the non-sinusoidal periodic waveform comprises a positive voltage applied during a first time period and a negative voltage applied during a second time period, and wherein the negative voltage has a magnitude that increases during the second time period.

Apparatus for manufacturing semiconductor device and manufacturing method of semiconductor device

A method of controlling a semiconductor process includes performing a semiconductor process using plasma in a chamber including an electrostatic chuck (ESC) on which a wafer is seated, obtaining an ESC voltage supplied to the ESC, an ESC current detected from the ESC, and bias power supplied to a bias electrode in the chamber, while the semiconductor process is being performed in the chamber, and determining whether a discharge has occurred between the ESC and the wafer using at least one of the ESC voltage, the ESC current, and the bias power.

Method for controlling semiconductor process

Growing community of inventors

Incheon, South Korea

Seul Ha Myung