Tokyo Electron Limited

Kla Tencor Corporation

Serguei Komarov

Yan Chen

Vi Vuong

John Josef Hench

Thaddeus Gerard Dziura

Jason Ferns

Described is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

Method of endpoint detection of plasma etching process using multivariate analysis

Disclosed is a method for determining an endpoint of an etch process using optical emission spectroscopy (OES) data as an input. Optical emission spectroscopy (OES) data are acquired by a spectrometer attached to a plasma etch processing tool. The acquired time-evolving spectral data are first filtered and demeaned, and thereafter transformed into transformed spectral data, or trends, using multivariate analysis such as principal components analysis, in which previously calculated principal component weights are used to accomplish the transform. A functional form incorporating multiple trends may be used to more precisely determine the endpoint of an etch process. A method for calculating principal component weights prior to actual etching, based on OES data collected from previous etch processing, is disclosed, which method facilitates rapid calculation of trends and functional forms involving multiple trends, for efficient and accurate in-line determination of etch process endpoint.

Provided is an automated determination of an optimized parameterization of a scatterometry model for analysis of a sample diffracting structure having unknown parameters. A preprocessor determines from a plurality of floating model parameters, a reduced set of model parameters which can be reasonably floated in the scatterometry model based on a relative precision for each parameter determined from the Jacobian of measured spectral information with respect to each parameter. The relative precision for each parameter is determined in a manner which accounts for correlation between the parameters for a combination.

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Sunnyvale, CA, United States of America

Serguei Komarov