Applied Materials, Inc.

Sergey Starik

Ganesh Balasubramanian

Todd J Egan

Juan Carlos Rocha-Alvarez

Bok Hoen Kim

Amit Kumar Bansal

Jianhua Zhou

Thomas E Nowak

Xinhai Han

Jian J Chen

Ramprakash Sankarakrishnan

Mohamad A Ayoub

Edward W Budiarto

Nagarajan Rajagopalan

Terrance Y Lee

Zhijun Jiang

Michael Wenyoung Tsiang

Jeongmin Lee

Patrick Reilly

Masaki Ogata

Heung Lak Park

Shahid Shaikh

Dmitriy Panasyuk

Abraham Ravid

Paul Dennis Connors

A method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD process

Apparatus and method of processing a substrate according to a PECVD process is described. Temperature profile of the substrate is adjusted to change deposition rate profile across the substrate. Plasma density profile is adjusted to change deposition rate profile across the substrate. Chamber surfaces exposed to the plasma are heated to improve plasma density uniformity and reduce formation of low quality deposits on chamber surfaces. In situ metrology may be used to monitor progress of a deposition process and trigger control actions involving substrate temperature profile, plasma density profile, pressure, temperature, and flow of reactants.

PECVD apparatus and process

Methods and systems for alignment of substrate-scale masks are described. The alignment methods presented may improve the uniformity and repeatability of processes which are impacted by the relative lateral position of a substrate-scale mask and a substrate. The methods involve measuring the 'overhang' of the substrate at multiple locations around the periphery of the substrate-scale mask. Based on the measurements, the relative position of the substrate relative to the substrate-scale mask is modified by adjustment of the substrate and/or mask position. The adjustment of the relative position is made in one adjustment in embodiments. A feature of hardware and methods involves the capability of making measurements and adjustments while a substrate processing system is fully assembled and possibly under vacuum.

Method of aligning substrate-scale mask with substrate

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Kyiv, Ukraine

Sergey Starik