Kla Tencor Corporation

Other

Kla-tencor Technologies Corporation

Sergey Kamensky

Jaydeep K Sinha

Haiguang Chen

Shouhong Tang

Pradeep Vukkadala

Sathish Veeraraghavan

Andrew Zeng

Enrique Chavez

Mark Plemmons

John Hager

Systems and methods for improving results of wafer higher order shape (HOS) characterization and wafer classification are disclosed. The systems and methods in accordance with the present disclosure are based on localized shapes. A wafer map is partitioned into a plurality of measurement sites to improve the completeness of wafer shape representation. Various site based HOS metric values may be calculated for wafer characterization and/or classification purposes, and may also be utilized as control input for a downstream application. In addition, polar grid partitioning schemes are provided. Such polar grid partitioning schemes may be utilized to partition a wafer surface into measurement sites having uniform site areas while providing good wafer edge region coverage.

Systems, methods and metrics for wafer high order shape characterization and wafer classification using wafer dimensional geometry tool

Systems and methods for processing phase maps acquired using interferometer wafer geometry tools are disclosed. More specifically, instead of performing phase unwrapping first and then analyze the unwrapped data in a height domain, systems and methods in accordance with the present disclosure operate in a curvature domain without having to perform any phase unwrapping.

Systems and methods for wafer structure uniformity monitoring using interferometry wafer geometry tool

Systems and methods for providing micro defect inspection capabilities for optical systems such as wafer metrology tools and interferometer systems are disclosed. The systems and methods in accordance with the present disclosure may detect, classify and quantify wafer surface features, wherein the detected defects are classified and the important defect metrology information of height/depth, area and volume is reported. The systems and methods in accordance with the present disclosure therefore provide more values for quantifying the negative effect of these defects on the wafer quality.

Systems and methods for wafer surface feature detection, classification and quantification with wafer geometry metrology tools

Interferometer systems and methods for providing improved defect detection and quantification are disclosed. The systems and methods in accordance with the present disclosure may detect surface defects on patterned or bare wafer surfaces and subsequently quantify them. In certain embodiments in accordance with the present disclosure, amplitude maps of the wafer surfaces are obtained and are utilized in addition/alternative to phase maps for wafer surface feature detection. Furthermore, local one-dimensional and/or two-dimensional unwrapping techniques are also disclosed and are utilized in certain embodiments in accordance with the present disclosure to provide height and depth information of the detected defects, further improving the detection capabilities of the measurement systems.

Systems and methods for wafer surface feature detection and quantification

Systems and methods for providing micro defect inspection capabilities for optical systems are disclosed. Each given wafer image is filtered, treated and normalized prior to performing surface feature detection and quantification. A partitioning scheme is utilized to partition the wafer image into a plurality of measurement sites and metric values are calculated for each of the plurality of measurement sites. Furthermore, transformation steps may also be utilized to extract additional process relevant metric values for analysis purposes.

Systems and methods of advanced site-based nanotopography for wafer surface metrology

A system and method for enhanced and expanded localized geometry characterization. Objects of interest are enhanced, detected, and classified according to user-defined parameters, and this enables enhanced contrast and more accurate feature detection, as well as more accurately defined feature object regions for feature geometry measurement and characterization.

Methods and systems of object based metrology for advanced wafer surface nanotopography

A method for enabling more accurate measurements of localized features on wafers is disclosed. The method includes: a) performing high order surface fitting to more effectively remove the low frequency shape components and also to reduce possible signal attenuations commonly observed from SEMI standard high pass, such as Gaussian and Double Gaussian filtering; b) constructing and applying a proper two dimensional LFM window to the residual image from the surface fitting processing stage to effectively reduce the residual artifacts at the region boundaries; c) calculating the metrics of the region using the artifact-reduced image to obtain more accurate and reliable measurements; and d) using site-based metrics obtained from front and back surface data to quantify the features of interest. Additional steps may also include: filtering data from measurements of localized features on wafers and adjusting the filtering behavior according to the statistics of extreme data samples.

Growing community of inventors

Campbell, CA, United States of America

Sergey Kamensky