Samsung Electronics Co., Ltd.

SeongSue Kim

Hwanseok Seo

Jongju Park

Donggun Lee

Taehoon Lee

Sanghyun Kim

Insung Kim

Dongwan Kim

Hakseung Han

Roman Chalykh

Raewon Yi

Chalykh Roman

Hoyeon Kim

Changyoung Jeong

A phase shift mask for extreme ultraviolet lithography includes a substrate, a reflective layer on the substrate, a capping layer on the reflective layer, a buffer pattern on the capping layer, the buffer pattern including an opening exposing a surface of the capping layer, and an absorber pattern on the buffer pattern, the absorber pattern including a refractive index less than a refractive index of the buffer pattern and a thickness greater than a thickness of the buffer pattern. The buffer pattern includes a material having an etch selectivity with respect to the absorber pattern and the capping layer.

Phase shift mask for extreme ultraviolet lithography and a method of manufacturing a semiconductor device using the same

An apparatus and a method for correctly measuring a phase of an extreme ultraviolet (EUV) mask and a method of fabricating an EUV mask including the method are described. The apparatus for measuring the phase of the EUV mask includes an EUV light source configured to generate and output EUV light, at least one mirror configured to reflect the EUV light as reflected EUV light incident on an EUV mask to be measured, a mask stage on which the EUV mask is arranged, a detector configured to receive the EUV light reflected from the EUV mask, to obtain a two-dimensional (2D) image, and to measure reflectivity and diffraction efficiency of the EUV mask, and a processor configured to determine a phase of the EUV mask by using the reflectivity and diffraction efficiency of the EUV mask.

Apparatus and method for measuring phase of extreme ultraviolet (EUV) mask and method of fabricating EUV mask including the method

Phase shift masks for an extreme ultraviolet lithography process includes a substrate, a reflection layer on the substrate, a capping layer on the reflection layer, and phase shift patterns on the capping layer. Each of the phase shift patterns may include a lower absorption pattern on the capping layer and an upper absorption pattern on the lower absorption pattern. A refractive index of the upper absorption pattern may be higher than a refractive index of the lower absorption pattern, and a thickness of the upper absorption pattern is smaller than a thickness of the lower absorption pattern.

Phase shift masks for extreme ultraviolet lithography

A phase-shift mask for extreme ultraviolet (EUV) lithography may be provided. The phase-shift mask may include a substrate, a reflection layer on the substrate, and phase-shift patterns including at least one metal nitride on the reflection layer. The at least one metal nitride may include at least one of TaN, TiN, ZrN, HfN, CrN, VN, NbN, MoN, WN, AlN, GaN, ScN, and YN.

Phase-shift mask for extreme ultraviolet lithography

An extreme ultraviolet (EUV) light generator includes a collecting mirror having a first focal point and a second focal point, the first focal point being closer to the collecting mirror than the second focal point, a laser to generate a laser beam and to radiate the laser beam toward the first focal point of the collecting mirror, and a droplet generator to generate a droplet and to discharge the droplet at the first focal point of the collecting mirror, wherein the collecting mirror includes a concave reflective surface, a through hole in a center of the reflective surface, and a drip hole between the through hole and an outer circumferential surface of the reflective surface.

EUV light generator including collecting mirror having drip hole

Provided is a reflective photomask including a substrate, and a reflective layer formed on the substrate. The reflective layer includes at least one recessed portion. An absorbing layer is formed in the recessed portion. The absorbing layer includes at least one absorbent and at least one polymer.

Reflective photomask, method of fabricating the same, and exposure apparatus using the reflective photomask

A reticle including a mask and an edge cover may be provided. The mask may include a mask substrate and mask patterns on the mask substrate. The edge cover may be coupled to an edge of the mask substrate and may include a floating cover part. The floating cover part may be spaced apart from the mask patterns while extending from a sidewall of the mask substrate over the mask patterns.

Reticle and exposure apparatus including the same

A treatment system comprises an energy source that generates a energy beam that is emitted along an energy beam pathway. A beam section shaper is positioned along the energy beam pathway that receives an incident energy beam and modifies a section shape thereof to output a shape-modified energy beam. A beam intensity shaper is positioned along the energy beam pathway that receives an incident energy beam having a first intensity profile and outputs an intensity-modified energy beam having a second intensity profile, wherein the first intensity profile has a relative maximum average intensity at a center region thereof and wherein the second intensity profile has a relative minimum average intensity at a center region thereof.

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Seoul, South Korea

SeongSue Kim