Asm IP Holding B.v.

SeongRyeong Kim

SeungHwan Lee

HakYong Kwon

KiKang Kim

JongHyun Ahn

YoungMin Kim

Sungbae Kim

SungBae Kim

SungKyu Kang

HieChul Kim

KyuMin Kim

This application relates to a method of filling a gap in a three-dimensional structure over a semiconductor substrate. The method may include depositing a thin film at least on a three-dimensional structure over a substrate using at least one reaction gas activated with a first radio frequency (RF) power having a first frequency, the three dimensional structure comprising a trench and/or hole. The method may also include etching the deposited thin film using at least one etchant activated with a second RF power having a second frequency lower than the first frequency. The method may further include repeating a cycle of the depositing and the etching at least once until the trench and/or hole are filled with the thin film. According to some embodiments, a thin film having substantially free of voids and/or seams can be formed in the three-dimensional structure.

Method for filling a gap in a three-dimensional structure on a semiconductor substrate

A method and apparatus for depositing a material on a surface of a substrate are disclosed. The method can include a treatment step to suppress a rate of material deposition on the surface of the substrate. The method can result in higher-quality deposited material. Additionally or alternatively, the method can be used to fill a recess within the surface of the substrate with reduced or no seam formation.

Cyclical deposition method including treatment step and apparatus for same

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Hwaseong-si, South Korea

SeongRyeong Kim