Samsung Electronics Co., Ltd.

Fine Semitech Corp.

Seong-sue Kim

In-sik Park

Du-seop Yoon

Kyung-geun Lee

Yong-Jin Ahn

Dong-gun Lee

Chang-jin Yang

Tatsuhiro Otsuka

Jung-Wan Ko

Tae-Geun Kim

Hwan-seok Seo

Sang-hyun Kim

Dong-Wan Kim

In-Sung Kim

Sang-Gyun Woo

Han-Ku Cho

In-oh Hwang

Suk-Joo Lee

Jae-Hyuck Choi

Jin-hong Park

Dong-ho Shin

Mun-Ja Kim

Du-Seop Yoon

Jin-sik Jung

Chalykh Roman

In-Sik Park

Jong-Ju Park

Tae-geun Kim

Eok-Bong Kim

Tatsuhiro Oisuka

Chang-Jin Yang

Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.

Reflective masks for use in extreme ultraviolet lithography apparatus and methods of manufacturing the same

Provided are a photomask and a method of correcting errors thereof. The photomask includes a multilayer reflection film covering one side surface of a substrate and an energy receiving layer covering the other side surface of the substrate. The method includes determining a local correction position on a frontside surface of the photomask according to a detected error of the photomask, and locally applying an energy beam to a backside surface region of the photomask aligned with the local correction position in a thickness direction of the photomask. The invention may be applicable to structures other than photomasks that benefit from modification of surface heights or selectively applied stress.

Photomask, method of correcting error thereof, integrated circuit device manufactured by using the photomask, and method of manufacturing the integrated circuit device

A reflective extreme ultraviolet mask includes a mask substrate having an exposing region and a peripheral region, the mask substrate including a light-scattering portion in the peripheral region, a reflective layer on an upper surface of the mask substrate, the reflective layer having a first opening exposing the light-scattering portion, and an absorbing layer pattern on the reflective layer, the absorbing layer pattern having a second opening in light communication with the first opening.

Method of manufacturing reflective extreme ultraviolet mask

Methods of reducing a registration error of a photomask are provided. A method of reducing a registration error of a photomask may include identifying the registration error with respect to a pattern element in a pattern region of the photomask. Moreover, the method may include reducing a thickness of a portion of a non-pattern region of the photomask by irradiating an energy beam onto a location of the non-pattern region of the photomask that is spaced apart from the pattern element, to generate stress at the pattern element. Related photomasks and methods of manufacturing an integrated circuit are also provided.

Methods of reducing a registration error of a photomask, and related photomasks and methods of manufacturing an integrated circuit

According to example embodiments, a reflective EUV mask may include a mask substrate, a patterned structure and a non-patterned structure on the mask substrate. At least one of the patterned structure and the non-patterned structure may include a thermally treated region configured to reduce a reflectivity of the respective patterned and non-patterned structure.

Reflective extreme ultraviolet mask and method of forming a pattern using the same

A beam generator for an aerial image generating apparatus includes a laser source for emitting a laser beam and a short wavelength beam source for generating a short wavelength beam by processing the laser beam such that the short wavelength beam is coherent with and has a wavelength shorter than that of the laser beam. A spectral unit includes a quartz plate and a spectral layer coated on a surface of the quartz plate. The spectral layer has a Brewster's angle greater than 70&#xb0; with respect to the laser beam such that the short wavelength beam is reflected from the spectral unit without the laser beam, increasing the reflectivity of the shortwave beam while decreasing the reflectivity and absorptivity of the laser beam in the spectral unit.

Beam generator

Reflective extreme ultraviolet mask and method of manufacturing the same

An apparatus and a method for generating extreme ultra violet radiation are provided. The apparatus for generating extreme ultra violet radiation includes a light source, a first reflecting mirror on which source light emitted from the light source is incident, a second reflecting mirror on which first reflected light reflected by the first reflecting mirror is incident, a focus mirror on which second reflected light reflected by the second reflecting mirror is incident, the focus mirror reflecting third reflected light back to the second reflecting mirror, and a gas cell on which fourth reflected light reflected by the second reflecting mirror is incident.

Apparatus and method for generating extreme ultra violet radiation

An EUV projection lens includes a substrate and concentric diffraction patterns on the substrate. The concentric diffraction patterns have an out-of phase height with respect to EUV light and include a material through which the EUV light has a transmittance higher than about 50% at the out-of phase height. The EUV projection lens has a high first order diffraction light efficiency and an optic system having the EUV projection lens has a high resolution.

EUV projection lens and optic system having the same

Reflective extreme ultraviolet mask

A system for monitoring haze of a photomask includes an installation unit in which a photomask is mounted, a light emission unit emitting a light beam to the photomask installed on the installation unit, a detection unit detecting a diffraction pattern of the light beam emitted by the light emission unit and passed through the photomask, and an analysis unit analyzing the diffraction pattern detected by the detection unit.

System for monitoring haze of a photomask

A method of and apparatus for recording data on an optical recording medium form a mark or a space by using a recording waveform having an erase pattern containing a multi-pulse. The method and the apparatus prevent distortion of the mark or the space and improve a mark shape such that a recording/reproducing characteristic of the optical recording medium is improved.

Method of and apparatus for recording data on optical recording medium

An apparatus for measuring an image of a pattern to be formed on a semiconductor by scanning the pattern using a scanner, the apparatus including an EUV mask including the pattern, a zoneplate lens on a first side of the EUV mask and adapted to focus EUV light on a portion of the EUV mask at a same angle as an angle at which the scanner will be disposed with respect to a normal line of the EUV mask, and a detector arranged on another side of the EUV mask and adapted to sense energy of the EUV light from the EUV mask, wherein NA=NA/n and NA=NA/n*&#x3c3;, where NAdenotes a NA of the zoneplate lens, NAdenotes a NA of the detector, and NAdenotes a NA of the scanner, &#x3c3; denotes an off-axis degree of the scanner, and n denotes a reduction magnification of the scanner.

Apparatus for measuring aerial image of EUV mask

Method of measuring aerial image of EUV mask

Growing community of inventors

Seoul, South Korea

Seong-sue Kim