Samsung Electronics Co., Ltd.

Seong-Keun Cho

Sang-Min Lee

Won-Don Joo

Jae-Hong Kim

Sung-Yeol Kim

Anton Sergeevich Medvedev

Kyung-Min Lee

Maksim Vladimirovich Riabko

Akinori Okubo

Sang-Woo Bae

Aleksandr Shorokhov

Mee-Hyun Lim

Taek-Jin Kim

Eun-Hee Jeang

In a method of testing an interconnection substrate, a blocking condition of a reference light reflected from a probe having an intrinsic optical characteristic may be set. An electric field emitted from a test interconnection substrate having a plurality of circuits may change the intrinsic optical characteristics of the probe into test optical characteristics. Light may be irradiated to the probe having the test optical characteristics. The reference light reflected from the probe having the test optical characteristic may be blocked in accordance with the blocking condition. The remaining reflected light that may be due to an abnormal circuit may be detected.

Method of testing an interconnection substrate and apparatus for performing the same

In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.

Method of detecting a defect on a substrate, apparatus for performing the same and method of manufacturing semiconductor device using the same

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Suwon-si, South Korea

Seong-Keun Cho