Samsung Electro-mechanics Co., Ltd.

Seong Jong Cheon

Young Sik Hur

Ho Kyung Kang

Hak Gu Kim

Yoo Sam Na

Jeong Hae Kim

Kang Ta Jo

Yong Duk Lee

Jin Su Park

Hyun Jin Yoo

Hyung Lee

Se Jong Kim

Sung Jae Yoon

Yoo Hwan Kim

Hyun Hwan Yoo

Jong Mo Lim

Young Kyoon Im

Won Gi Kim

Young Bal Kim

Soo Ki Choi

Jae Hyouck Choi

Jang Ho Park

Jin Seon Park

Mi Ran Hwang

Ho Taek Song

A radio-frequency device includes a radio-frequency module. The radio-frequency module includes a first substrate, a second substrate, a radio-frequency integrated circuit (RFIC), a front-end integrated circuit (FEIC), and a flexible substrate. The RFIC has at least a portion surrounded by a first core member and is configured to input or output a base signal and a first radio-frequency (RF) signal having a frequency higher than a frequency of the base signal. The FEIC has at least a portion surrounded by a second core member and is configured to input or output the first RF signal and a second RF signal having a power different from a power of the first RF signal. The flexible substrate is configured to connect the first and second substrates to each other, provide a transmission path for the first RF signal, and being more flexible than the first and second substrates.

Electronic device with radio-frequency module

A chip radio frequency package includes a substrate including a first cavity, first and second connection members, a core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the substrate, and a first front-end integrated circuit (FEIC) disposed in the first cavity. The core member includes a core insulating layer and a core via that penetrates the core insulating layer. The first connection member has a structure in which a first insulating layer and a first wiring layer are stacked. The second connection member has a second structure in which a second insulating layer and a second wiring layer are stacked. The RFIC inputs or outputs a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, and the first FEIC inputs or outputs the first RF signal and a second RF signal.

Chip radio frequency package and radio frequency module

A front-end module includes: a substrate including a first connection member in which at least one first insulating layer and at least one first wiring layer are alternately stacked, a second connection member in which at least one second insulating layer and at least one second wiring layer are alternately stacked, and a core member disposed between the first and second connection members; a radio-frequency component mounted on a surface of the substrate and configured to amplify a main band of an input RF signal or filter bands outside the main band; an inductor disposed on a surface of the core member and electrically connected to the radio-frequency component; and a ground plane disposed on another surface of the core member. The core member includes a core insulating layer thicker than an insulating layer among at least one first insulating layer and the at least one second insulating layer.

Front-end module

A frontend module includes a first filter having a passband of a first frequency band, a second filter having a passband of a second frequency band, the second frequency band being higher than the first frequency band, a third filter having a passband of a third frequency band, the third frequency band being higher than the second frequency band, and a sub-filter, connected to the second filter, configured to provide attenuation characteristics for the first frequency band, wherein the second filter comprises a plurality of parallel LC resonance circuits arranged between a ground and different nodes, from among a plurality of nodes between a first terminal and a second terminal, wherein an inductor is connected to a portion of the plurality of parallel LC resonance circuits.

Frontend module

A frontend module includes an antenna terminal, and a duplexer including a first filter connected to the antenna terminal and a first terminal, configured to perform cellular communications within a 3.3 GHz to 4.2 GHz band, and a second filter connected to the antenna terminal and a second terminal, configured to perform Wi-Fi communications within a 5.15 GHz to 5.950 GHz band, wherein each of the first filter and the second filter includes an LC filter, and a portion of an operating time period of the first filter overlaps a portion of an operating time period of the second filter.

A front end module includes: a first antenna terminal; a second antenna terminal; a switch including a plurality of first side terminals on a first side and a plurality of second side terminals on a side opposite to the first side, each of the first side terminals being connected to one of the first antenna terminal and the second antenna terminal; a first filter connected to the first antenna terminal; a second filter connected to the first antenna terminal; a third filter connected to one of the second side terminals; and a fourth filter connected to one of the second side terminals. The third filter and the fourth filter are connected to one of the first antenna terminal and the second antenna terminal.

Front end module

A radio frequency module is provided. The module includes a core member, a front-end integrated circuit (FEIC), a first connection member, a second connection member disposed on an upper surface of the core member, a radio frequency integrated circuit (RFIC) disposed on an upper surface of the second connection member, and configured to input or output a base signal and a first radio frequency (RF) signal having a frequency higher than a frequency of the base signal, through a wiring layer, a substrate disposed on a lower surface of the first connection member; and an electrical connection structure configured to electrically connect the first connection member and the substrate. The FEIC is configured to input or output the first RF signal and a second RF signal which has a power different from a power of the first RF signal.

An acoustic resonator filter package includes an acoustic resonator including a piezoelectric layer, a first electrode disposed on a first surface of the piezoelectric layer, and a second electrode disposed on a second surface of the piezoelectric layer; a first substrate having an upper surface on which the acoustic resonator is disposed, the first substrate comprising a first coupling member surrounding the acoustic resonator; a filter spaced apart from the acoustic resonator in an upward direction; a second substrate having a lower surface on which the filter is disposed, the second substrate including a second coupling member disposed above the first coupling member; and a connection member connecting the first coupling member and the second coupling member to each other, the connection member being made of a material different from a material of which the first coupling member and the second coupling member are made.

Acoustic resonator filter package

A front end module includes a base filter configured to operate as a bandpass filter passing a pass band of an input radio frequency signal; a switch connected to the base filter, and a first notch filter and a second notch filter selectively connected to the base filter through the switch, wherein a stop band of the first notch filter and a stop band of the second notch filter overlap the pass band of the base filter in a band equal to or higher than a center frequency of the pass band of the base filter.

A high pass filter includes: a first resonant circuit including an inductor and a capacitor in parallel between first and second terminals; a second resonant circuit including an inductor and a capacitor in series between a first end of the first resonant circuit and a ground; a third resonant circuit including an inductor and a capacitor in series between a second end of the first resonant circuit and the ground; a fourth resonant circuit disposed between the first end of the first resonant circuit and the first terminal, and including a first acoustic resonator; and a fifth resonant circuit disposed between the second end of the first resonant circuit and the second terminal, and including a second acoustic resonator. Attenuation regions respectively formed by the first, second, and third resonant circuits are arranged in lower frequency regions than attenuation regions respectively formed by the fourth and fifth resonant circuits.

High pass filter

A band pass filter includes: a first circuit unit including a first series LC resonant circuit disposed between a first terminal and a second terminal; a second circuit unit disposed between the first circuit unit and the second terminal, and including a first parallel LC resonant circuit; and a third circuit unit disposed between the first terminal and a ground, and including a second series LC resonant circuit, wherein a resonant frequency of the first circuit unit is in a pass band.

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Suwon-si, South Korea

Seong Jong Cheon