Korea Kumho Petrochemical Co., Ltd.

Seong-Duk Cho

Joo-Hyeon Park

Dong-Chul Seo

Hyun-Sang Joo

Young-Taek Lim

Chang-Min Kim

Ji-Young Song

Kyoung-Mun Kim

The present invention provides a polymer represented by the following formula 1 and a chemically amplified resist composition including the polymer, which resist composition is excellent in adhesion, storage stability and dry etch resistance, with good resolution in both C/H and L/S patterns, and provides a good pattern profile irrespective of the type of the substrate due to its good process window: 

Copolymer of alicyclic olefin having secondary hydroxyl group and acryl compound, and chemically amplified resist composition containing the same

A chemically amplified resist composition includes a novel polymer, a photoacid generator, and a solvent. The chemically amplified resist can form a resist pattern that is excellent in adhesiveness with a low dependency to the substrate, transparency at the far ultraviolet wavelength range such as KrF Excimer laser or ArF Excimer laser, dry etch resistance, sensitivity, resolution, and developability. In addition, the polymer contains a maximum number of saturated aliphatic rings to enhance etching resistance, and additionally includes an alkoxyalkyl acrylate monomer introduced as a solution to the problem with the conventional polyacrylate resist in regard to edge roughness of the pattern, to form a uniform edge of the pattern because the alkylalcohol compound generated together with a formaldehyde and a carboxylate compound by a deprotection reaction of the alkoxyalkyl acrylate monomer with an acid acts as a solvent or an antifoaming agent in the pattern.

Polymer and chemically amplified resist composition containing the same

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Gwangju-si, South Korea

Seong-Duk Cho