Samsung Electronics Co., Ltd.

Seong-Bo Shim

Sang-Wook Kim

Jeong-Ho Yeo

Seong-woon Choi

Seong-Ho Moon

Seung-Hune Yang

Chun-Suk Suh

Ho-Yeon Kim

Sunghoon Jang

Artem Shamsuarov

Gun Huh

Jung-hoon Ser

WonChan Lee

Moon-gyu Jeong

A method of measuring an overlay includes generating an original signal using first and second overlay measurement keys that are spaced apart from each other, generating a first spectrum signal by performing Fourier transform of the original signal, generating a second spectrum signal by filtering the first spectrum signal, and generating a corrected signal by performing inverse Fourier transform of the second spectrum signal.

Method and apparatus for measuring overlay

A method for process proximity correction may include obtaining a point spread function (PSF) from test patterns, the test patterns including an etching process performed thereon, generating a target layout with polygonal patterns, dividing the target layout into grid cells, generating a density map including long-range layout densities, each of the long-range layout densities being obtained from the polygonal patterns located within a corresponding one of the grid cells, performing a convolution of the long-range layout densities with the PSF to obtain long-range etch skews for the grid cells, and generating an etch bias model including short-range etch skews and the long-range etch skews, each of the short-range etch skews being obtained from a neighboring region of a target pattern selected from the polygonal patterns in each of the grid cells.

Method for process proximity correction

Provided is a method of manufacturing a photo-mask having a micro pattern. The method includes providing an analyzing design layout, dividing the analyzing design layout into a two-dimensionally repeated portion, a one-dimensionally repeated portion, and a non-repeated portion, forming a first corrected layout by performing optical proximity correction (OPC) in the two-dimensionally repeated portion, forming a second corrected layout, taking account of the first corrected layout, by performing OPC in the one-dimensionally repeated portion, forming a third corrected layout, taking account of the first corrected layout and the second corrected layout, by performing OPC in the non-repeated portion, and forming a photo-mask based on the first through third corrected layouts.

Method of manufacturing photo-mask

A method of manufacturing a semiconductor device includes dividing a design pattern layout into a repetitive pattern part and a non-repetitive pattern part, obtaining an optical proximity correction (OPC) bias from an extracted portion, the extracted portion being a partial portion of the repetitive pattern part, applying the OPC bias obtained from the extracted portion equally to the extracted portion and other portions of the repetitive pattern part so as to form a first corrected layout in which corrected layouts of the other portions are the same as that of the extracted portion, and forming a photomask in all portions of the repetitive pattern part according to the first corrected layout.

Method of manufacturing semiconductor device by using uniform optical proximity correction

Provided is a semiconductor apparatus. The semiconductor apparatus includes a reference grating and a plurality of detectors. The reference grating diffracts an optical signal generated by being reflected from the alignment grating of a substrate to diffraction beams with different orders. The plurality of detectors measure intensities of a plurality of diffraction beams selected from the diffraction beams, respectively.

Semiconductor apparatus including alignment tool

Growing community of inventors

Suwon-si, South Korea

Seong-Bo Shim