Applied Materials, Inc.

Novellus Systems Incorporated

Intermolecular, Inc.

Lg Display Co., Ltd.

Seon-Mee Cho

John M White

Majeed Foad

Tae Kyung Won

Easwar Srinivasan

David Mordo

George D Papasouliotis

Haiying Fu

Dong-Kil Yim

Jozef Kudela

Ananda K Bandyopadhyay

Kartik Ramaswamy

Li-Qun Xia

Ellie Y Yieh

Soo Young Choi

Hiroji Hanawa

Shankar Venkataraman

Chi-I Lang

Shijian Li

Tsutomu Tanaka

Suhail Anwar

Beom Soo Park

Chen-An Chen

Dian Sugiarto

Peter Wai-Man Lee

Tetsuya Ishikawa

Alexandros T Demos

Carl A Sorensen

Biagio Gallo

Sang M Lee

Michio Aruga

Kaveh F Niazi

Feng Gao

Dongwon Choi

Mike Barnes

Stuart Brinkley

Ranjit Indrajit Shinde

Douglas D Truong

Michael S Barnes

Bart Jan Van Schravendijk

Dennis Michael Hausmann

Karl Anthony Littau

Hichem M'Saad

Minh Le

Farhad K Moghadam

Min-Cheol Kim

Mihai A Buretea

Anh Duong

Ron Rulkens

Qunhua Wang

Lily L Pang

Yi Cui

Brian Lu

Woosup Shin

Helinda Nominanda

Michelle T Schulberg

Young Jin Choi

Jingang Su

Kwon-Sik Park

Majid Gharghi

Weijie Wang

Yoon-Kyung Chang

The present invention generally relates to TFTs and methods for fabricating TFTs. For either back channel etch TFTs or for etch stop TFTs, multiple layers for the passivation layer or the etch stop layers permits a very dense capping layer to be formed over a less dense back channel protection layer. The capping layer can be sufficiently dense so that few pin holes are present and thus, hydrogen may not pass through to the semiconductor layer. As such, hydrogen containing precursors may be used for the capping layer deposition.

Multilayer passivation or etch stop TFT

A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises two conductors, one of which has a plurality of apertures. In one aspect, apertures in different portions of the conductor have different sizes, spacing or orientations. In another aspect, adjacent apertures at successive longitudinal positions are offset along the transverse dimension. In another aspect, the apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

Transmission line RF applicator for plasma chamber

A co-sputter technique is used to deposit In&#x2014;Ga&#x2014;Zn&#x2014;O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

Method to grow in-situ crystalline IGZO using co-sputtering targets

Embodiments of the disclosure generally provide methods of forming a silicon containing layers in TFT devices. The silicon can be used to form the active channel in a LTPS TFT or be utilized as an element in a gate dielectric layer, a passivation layer or even an etch stop layer. The silicon containing layer is deposited by a vapor deposition process whereby an inert gas, such as argon, is introduced along with the silicon precursor. The inert gas functions to drive out weak, dangling silicon-hydrogen bonds or silicon-silicon bonds so that strong silicon-silicon or silicon-oxygen bonds remain to form a substantially hydrogen free silicon containing layer.

Methods for depositing a silicon containing layer with argon gas dilution

The present invention generally relates to methods measuring pinhole determination. In one aspect, a method of measuring pinholes in a stack, such as a TFT stack, is provided. The method can include forming an active layer on a deposition surface of a substrate, forming a dielectric layer over the active layer, delivering an etchant to at least the dielectric layer, to etch both the dielectric layer and any pinholes formed therein and optically measuring the pinhole density of the etched dielectric layer using the active layer.

Pin hole evaluation method of dielectric films for metal oxide semiconductor TFT

Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.

Methods for forming crystalline IGZO through annealing

A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

Methods for processing a substrate are described herein. Methods can include positioning a substrate in a processing chamber, maintaining the processing chamber at a temperature below 400&#xb0; C., flowing a reactant gas comprising either a silicon hydride or a silicon halide and an oxidizing precursor into the process chamber, applying a microwave power to create a microwave plasma from the reactant gas, and depositing a silicon oxide layer on at least a portion of the exposed surface of a substrate.

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A method of processing a substrate in a processing chamber is provided. The method generally includes applying a microwave power to an antenna coupled to a microwave source disposed within the processing chamber, wherein the microwave source is disposed relatively above a gas feeding source configured to provide a gas distribution coverage covering substantially an entire surface of the substrate, and exposing the substrate to a microwave plasma generated from a processing gas provided by the gas feeding source to deposit a silicon-containing layer on the substrate at a temperature lower than about 200 degrees Celsius, the microwave plasma using a microwave power having a power density of about 500 milliWatts/cmto about 5,000 milliWatts/cmat a frequency of about 1 GHz to about 10 GHz.

Thin film deposition using microwave plasma

Methods and apparatus for improving mechanical properties of a dielectric film on a substrate are provided. In some embodiments, the dielectric film is a carbon-doped oxide (CDO). The methods involve the use of modulated ultraviolet radiation to increase the mechanical strength while limiting shrinkage and limiting any increases in the dielectric constant of the film. Methods improve film hardness, modulus and cohesive strength, which provide better integration capability and improved performance in the subsequent device fabrication procedures such as chemical mechanical polishing (CMP) and packaging.

Method to improve mechanical strength of low-K dielectric film using modulated UV exposure

Embodiments of the invention provide a novel apparatus and methods for forming a conformal doped layer on the surface of a substrate. A substrate is provided to a process chamber, and a layer of dopant source material is deposited by plasma deposition, atomic layer deposition, or plasma-assisted atomic layer deposition. The substrate is then subjected to thermal processing to activate and diffuse dopants into the substrate surface.

Method for conformal plasma immersed ion implantation assisted by atomic layer deposition

Plasma immersion ion implantation employing a very high RF bias voltage on an electrostatic chuck to attain a requisite implant depth profile is carried out by first depositing a partially conductive silicon-containing seasoning layer over the interior chamber surfaces prior to wafer introduction.

Plasma immersion ion implantation method using a pure or nearly pure silicon seasoning layer on the chamber interior surfaces

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Santa Clara, CA, United States of America

Seon-Mee Cho