Electronics and Telecommunications Research Institute

Seok-Hwan Moon

Kwang-Seong Choi

Chi Hoon Jun

Sang Choon Ko

Yong Sung Eom

Jiho Joo

Eun Soo Nam

Jae Kyoung Mun

Ki Seok Jang

Woojin Chang

Young Rak Park

Sung-Bum Bae

Gwang-Mun Choi

Chanmi Lee

Je Ho Na

In-Kyu You

Yong Suk Yang

Bock Soon Na

Soon-Won Jung

Ho-Gyeong Yun

Seung Youl Kang

Kyoung Ik Cho

Gunn Hwang

Moo Jung Chu

Tae Goo Choy

Hyun-cheol Bae

Woo-Young Jang

Yong-Sung Eom

Jeong-Jin Kim

Ho Gyeong Yun

Ki-Seok Jang

Hyungyu Jang

KeonSoo Jang

Joong Moo Park

Provided is an electronic device including a plurality of substrate electrodes on a substrate, the substrate electrodes including initial electrodes and spare electrodes, a bonding material covering the initial electrodes and the spare electrodes, module structures respectively provided on first initial electrodes of the initial electrodes, and solders between each of the first initial electrodes and each of the module structures, wherein the spare electrodes include second spare electrodes, wherein the module structures are not provided on the second spare electrodes, wherein the bonding material on the first initial electrodes is harder than the bonding material on the second spare electrodes.

Electronic device and its repair method

Provided is a method for manufacturing an electronic device. The method for manufacturing the electronic device includes mapping good elements and defective elements on a substrate, providing a first transparent structure including a first adhesive layer on the substrate, selectively providing first laser light to the defective elements to cure the first adhesive layer on the defective elements and separate the defective elements from the substrate, providing a second transparent structure including a second adhesive layer, which adheres to new elements replaced for the defective elements, on the substrate, and selectively providing second laser light to the new elements to bond the new elements to the substrate.

Method of manufacturing electric device

Provided is a method of fabricating a semiconductor package. The method of fabricating the semiconductor package include preparing a lower element including a lower substrate, a lower electrode, an UBM layer, and a reducing agent layer, providing an upper element including an upper substrate, an upper electrode, and a solder bump layer, providing a pressing member on the upper substrate to press the upper substrate to the lower substrate, and providing a laser beam passing through the pressing member to bond the upper element to the lower element.

Semiconductor package with intermetallic-compound solder-joint comprising solder, UBM, and reducing layer materials

Provided is a method for manufacturing a semiconductor package, the method including providing a semiconductor chip on a substrate, providing a bonding member between the substrate and the semiconductor chip, and bonding the semiconductor chip on the substrate by irradiating of a laser on the substrate. Here, the bonding member may include a thermosetting resin, a curing agent, and a laser absorbing agent.

Method for manufacturing semiconductor package

A laser bonding method includes forming a bonding part including an adhesive layer and a conductive particle disposed within the adhesive layer on a substrate; aligning a bonding target by disposing the bonding target on a surface of the bonding part opposite the substrate; disposing a pressing part on a surface of the bonding target that is opposite to the bonding part and pressing the bonding target onto the bonding part through the pressing part; heating the bonding target by irradiating at least the pressing part with a laser and conducting heat from the pressing part to the bonding target and from the bonding target to the bonding part; and bonding together the bonding part and the bonding target by the heat conducted from the bonding target to the bonding part so that the conductive particle electrically connects the substrate and the bonding target. The pressing part may be removed.

Laser bonding method

Provided are a semiconductor device and a method of fabricating the same. The semiconductor device includes: an active region provided on a substrate; an inlet channel formed as a single cavity buried in one side of the substrate; an outlet channel formed as a single cavity buried in the other side of the substrate; a micro channel array comprising a plurality of micro channels, wherein the plurality of micro channels are formed as a plurality of cavities buried in the substrate, and one end of the micro channel array is connected to a side of the inlet channel and the other end of the micro channel array is connected to a side of the outlet channel; and a micro heat sink array separating the micro channels from one another.

Semiconductor device and method of fabricating the same

Provided are a large-area nano-scale active printing device, a fabricating method of the same, and a printing method using the same. The printing device may include a substrate, first interconnection lines extending along a first direction, on the substrate, an interlayered dielectric layer provided on the first interconnection lines to have holes partially exposing the first interconnection lines, second interconnection lines provided adjacent to the holes in the interlayered dielectric layer to cross the first interconnection lines, and wedge-shaped electrodes provided at intersections with the first and second interconnection lines and connected to the first interconnection lines. The wedge-shaped electrodes protrude upward at centers of the holes.

Active cliche for large-area printing, manufacturing method of the same, and printing method using the same

Provided is a method of manufacturing a nitride semiconductor device. The method includes forming a plurality of electrodes on a growth substrate on which first and second nitride semiconductor layers are sequentially stacked, forming upper metal layers on the plurality of electrodes respectively, removing the growth substrate to expose a lower surface of the first nitride semiconductor layer, and forming a third nitride semiconductor layer and a lower metal layer sequentially on the exposed lower surface of the first nitride semiconductor layer.

Methods of manufacturing nitride semiconductor devices

The present inventive concept discloses an impact-type piezoelectric micro power generator. The impact-type piezoelectric micro power generator may comprise a base having a cavity and at least one stop area adjacent to the cavity; a frame fastened to the base; a vibrating body comprising a plurality of first vibrating beams extended from the frame toward a top of the cavity, an impact beam connected to between first tips of the plurality of first vibrating beams and extended onto the stop area, and a second vibrating beam extended from the impact beam to between the plurality of first vibrating beams, the second vibrating beam having a second tip; and a piezoelectric device disposed on one of a top and a bottom of the second vibrating beam and the impact beam, the piezoelectric device generating electric power according to impacts of the vibrating body to the stop area and bending of the impact beam and the second vibrating beam.

Impact-type piezoelectric micro power generator

Provided is a solid type heat dissipation device for electronic communication appliances. The solid type heat dissipation device includes a graphite thin plate horizontally transferring heat, a plurality of metal fillers passing through the graphite thin plate to vertically transfer heat, and a plurality of metal thin plates attached to upper and lower surfaces of the graphite thin plate and connected to the metal fillers.

Solid type heat dissipation device

A heat pipe having a woven-wire wick and a straight fine-wire wick is disclosed. The heat pipe can be easily manufactured and improve a thermal performance of the heat pipe. The heat pipe includes a pipe container; a straight fine-wire wick located in the pipe container, wherein the straight fine-wire wick has a porosity; a woven-wire wick having a plurality of groups of wires spirally woven to form a substantially cylindrical wick, for contacting the straight fine-wire wick to an inner wall of the pipe container, wherein when the woven-wire wick is forced radially and inwardly in order for the woven-wire wick to be inserted into the pipe container, the woven-wire wick has restoration forces in a radial and outward direction from axis of the woven-wire wick and is tightly contact with the inner wall of the pipe container, and wherein ends of the straight fine-wire wick and the woven-wire wick are fixed to ends of the pipe container.

Heat pipe having woven-wire wick and straight-wire wick

Growing community of inventors

Daejeon, South Korea

Seok-Hwan Moon