Samsung Electronics Co., Ltd.

Seok Geun Ahn

Sang Hoon Lee

Hyun Ki Kim

Sunchul Kim

Sun Chul Kim

Sang Soo Kim

Jun Young Oh

Juhyung Lee

Yong Kwan Lee

Min Keun Kwak

Byoung Wook Jang

Ji Won Shin

Disclosed are semiconductor packages and their fabrication methods. The semiconductor package comprises a package substrate, a redistribution layer on the package substrate, a vertical connection terminals that connects the package substrate to the redistribution layer, a first semiconductor chip between the package substrate and the redistribution layer, a first molding layer that fills a space between the package substrate and the redistribution layer, a second semiconductor chip on the redistribution layer, a third semiconductor chip on the second semiconductor chip, a first connection wire that directly and vertically connects the redistribution layer to a first chip pad of the third semiconductor chip, the first chip pad is beside the second semiconductor chip and on a bottom surface of the third semiconductor chip, and a second molding layer on the redistribution layer and covering the second semiconductor chip and the third semiconductor chip.

Semiconductor package and method of fabricating the same

A semiconductor package includes a first substrate, a first semiconductor chip disposed on the first substrate, a second substrate disposed on the first semiconductor chip, a second semiconductor chip disposed on the second substrate, and a mold layer disposed between the first substrate and the second substrate. The second substrate includes a recess formed at an edge, the mold layer fills the recess, and the recess protrudes concavely inward from the edge of the second substrate toward a center of the second substrate.

Semiconductor package

A semiconductor package includes a first substrate including a first recess formed in a top surface of the first substrate, a first semiconductor chip disposed in the first recess and mounted on the first substrate, an interposer substrate disposed on the first semiconductor chip and including a second recess formed in a bottom surface of the interposer substrate, an adhesive layer disposed in the second recess and in contact with a top surface of the first semiconductor chip, a plurality of connection terminals spaced apart from the first recess and connecting the first substrate to the interposer substrate, and a molding layer disposed between the first substrate and the interposer substrate.

A bonding apparatus includes a body part; a vacuum hole disposed in the body part; a first protruding part protruding in a first direction from a first surface of the body part; a second protruding part protruding from the first surface of the body part in the first direction and spaced farther apart from a center of the first surface of the body part than the first protruding part in a second direction intersecting with the first direction; and a trench defined by the first surface of the body part and second surfaces of the first protruding part, the second surfaces protruding in the first direction from the first surface of the body part, and the trench being connected to the vacuum hole, wherein the second protruding part protrudes farther from the first surface of the body part in the first direction than the first protruding part.

Bonding apparatus and semiconductor package fabrication equipment including the same

Growing community of inventors

Cheonan-si, South Korea

Seok Geun Ahn