Adeka Corporation

Samsung Electronics Co., Ltd.

Senji Wada

Atsushi Sakurai

Tomoharu Yoshino

Atsuya Yoshinaka

Masako Shimizu

Youn-Joung Cho

Jung-sik Choi

Haruyoshi Sato

Kyoo-Chul Cho

Junji Ueyama

Jin-Seo Lee

Akio Saito

Naoki Yamada

Tetsuji Abe

Takashi Higashino

Ryusaku Fujimoto

An alkoxide compound represented by the following formula (I), and a raw material for thin film formation containing the alkoxide compound. In the formula, Rrepresents a linear or branched alkyl group having 2 to 4 carbon atoms, and Rand Reach represent a linear or branched alkyl group having 1 to 4 carbon atoms. In the formula (I), Ris preferably an ethyl group. It is also preferred that one or both of Rand Rbe an ethyl group. The raw material for thin film formation including an alkoxide compound represented by general formula (I) is preferably used as a raw material for chemical vapor deposition. 

Alkoxide compound and raw material for forming thin film

The &#x3b2;-ketoimine ligand is represented by the following formula 1: wherein R1 and R2 are each independently a C1-C5 alkyl group. A metal complex compound includes the &#x3b2;-ketoimine ligand. A method of forming the &#x3b2;-ketoimine ligand and a method of forming a thin film using the metal complex compound including &#x3b2;-ketoimine ligand are provided.

&#x3b2;-ketoimine ligand, method of preparing the same, metal complex comprising the same and method of forming thin film using the same

A novel metal compound of general formula (1), a material for chemical vapor phase growth containing the compound, and a process for forming a metal-containing thin film by chemical vapor phase growth using the material. Among the compounds of formula (1), those wherein X is a chlorine atom are preferred because of inexpensiveness and high volatility. When M is titanium, those wherein m is 1 are preferred as having a greater difference between a volatilization temperature (vapor temperature) and a deposition temperature (reaction temperature), which provides a broader process margin.  In formula (1), M is titanium, zirconium, or hafnium; X is a halogen atom; and m is 1 or 2.

Metal compound, material for chemical vapor phase growth, and process for forming metal-containing thin film

A metal alkoxide compound represented by the following general formula (1),  wherein each of Rto Ris independently a hydrogen atom or a methyl group; M is a titanium, a zirconium or a hafnium atom.

Metal alkoxide compound, material for forming thin film, and method for producing thin film

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Tokyo, Japan

Senji Wada