Disco Corporation

Senichi Ryo

Yukinobu Ohura

Toshiyuki Yoshikawa

Tomoaki Endo

Kentaro Odanaka

Yusaku Ito

Hirokazu Matsumoto

Hiroto Yoshida

Kenta Nakano

Yuki Ogawa

Tomotaka Tabuchi

Yohei Yamashita

Satoshi Kumazawa

Yu Kudo

Junichi Kuki

Yuki Ikeda

Ayana Nakanishi

Sho Osawa

Hideyuki Kawaguchi

A method of processing a wafer having a plurality of devices provided in respective areas demarcated on a face side of the wafer by a plurality of projected dicing lines. The method includes coating the face side with a protective film agent and thereafter drying the protective film agent into a protective film covering the face side, applying a laser beam having a wavelength absorbable by the wafer to the wafer along the projected dicing lines on the face side, thereby producing a plurality of laser-processed slots in the wafer, cleaning away the protective film, applying ultraviolet rays to the face side to remove an organic substance deriving from the protective film and remaining on the face side, and covering coverage areas corresponding to the respective devices on the face side with an encapsulating resin.

Method of processing wafer

There is provided a protective film agent with which a workpiece is coated when the workpiece is processed. The protective film agent includes a water-soluble resin, a light absorbing agent having a flavone structure, a flavonol structure, or an isoflavone structure, and a solvent that dissolves the resin and the light absorbing agent.

Protective film agent and processing method of workpiece

A manufacturing method of a protective film agent for laser dicing that includes a solution preparation step of preparing a solution in which at least a water-soluble resin, an organic solvent, and an ultraviolet absorber are mixed; and an ion-exchange treatment step of carrying out ion exchange of sodium ions in the solution by using a cation-exchange resin.

Method of manufacturing protective film agent

A protective film agent for laser dicing that includes a solution in which at least a water-soluble resin, an organic solvent, and an ultraviolet absorber are mixed and in which the content of sodium (Na) of the solution is equal to or lower than 100 ppb in weight ratio. Preferably, the solution further includes an antioxidant.

Protective film agent for laser dicing

A method of processing a workpiece includes: a frame unit preparing step of preparing a frame unit including a tape affixed to an undersurface of the workpiece; a protective film forming step of forming a protective film on a top surface of the workpiece; a cutting step of cutting the workpiece by applying a laser beam; an interval expanding step of widening intervals between chips formed in the cutting step by expanding the tape outward in a radial direction; and an etching step of removing altered regions formed in the respective chips.

Workpiece processing method and device chip manufacturing method

Disclosed herein is a protective film forming resin agent to be used for laser processing including a water-soluble resin, and particulates of a metal oxide which are dispersed in an aqueous solution of the resin and a section of which has an elongated shape having a major axis and a minor axis orthogonal to the major axis. The particulates of the metal oxide the section of which has the elongated shape having the major axis and the minor axis orthogonal to the major axis are dispersed in the aqueous solution of the resin. When the aqueous solution is applied to a workpiece to form a protective film on the workpiece and then the workpiece is subjected to laser processing, therefore, absorbance of a laser beam in the protective film is enhanced, so that processing efficiency is enhanced.

Protective film forming resin agent and laser processing method

A method for dividing a wafer having a wiring layer including Cu on the front side, the front side of the wafer being partitioned by a plurality of crossing division lines to define a plurality of separate regions where a plurality of devices are formed. The method includes a laser processed groove forming step of applying a laser beam to the wiring layer along each division line to thereby remove the wiring layer along each division line and form a laser processed groove along each division line, a cutting step of using a cutting blade having a thickness smaller than the width of each laser processed groove to fully cut the wafer along each laser processed groove after performing the laser processed groove forming step, and a dry etching step of dry-etching at least each laser processed groove after performing the laser processed groove forming step.

Wafer dividing method

A protective film applying apparatus includes a protective film forming and cleaning unit for forming a protective film on a surface of a wafer and cleaning the protective film away. A coverage state detector detects a coverage state of the protective film, and a controller determines whether or not the protective film has a film thickness falling within a predetermined range. If the controller decides that the thickness of the protective film does not fall in the predetermined range, the controller operates the protective film forming and cleaning unit to clean away the protective film, performs a pretreating process selected depending on the film thickness on the surface, and operates the protective film forming and cleaning unit to form a protective film again on the surface of the wafer.

Protective film applying apparatus and protective film applying method

A fluorescence detecting apparatus includes an excitation light applying section that applies excitation light to a protective film containing an absorbing agent. A photomultiplier tube detects fluorescence emitted from the absorbing agent due to absorption of the excitation light. A fluorescence passing filter removes light having wavelengths other than the wavelength of the fluorescence emitted from the absorbing agent, and a reflecting mirror having a reflecting surface reflects the fluorescence emitted from the protective film toward the photomultiplier tube. This reflecting surface is formed by a part of a curved surface forming a spheroid having first and second foci. The first focus is positioned at a target area of the protective film where the excitation light is applied, and the second focus is positioned at a light detecting element included in the photomultiplier tube.

Fluorescence detecting apparatus

A method detects whether or not a workpiece is coated with a water-soluble protective film. The method includes a preparatory step before detection and a detecting step. The preparatory step includes irradiating with infrared light a first region coated with the water-soluble protective film and a second region not coated with the water-soluble protective film for a reference, receiving the reflected light, and thereby acquiring an intensity of reflection from the first region and an intensity of reflection from the second region; and a threshold determining step of determining a threshold from the intensity of reflection from the first region and the intensity of reflection from the second region at a wavenumber of 3000 cmto 3600 cm. The detecting step includes irradiating a surface of the workpiece with the infrared light, receiving the reflected light, and comparing the thus obtained intensity of reflection with the threshold.

Protective film detecting method

There is provided a laser processing method of laser-processing a wafer along a plurality of streets formed in a lattice manner on a top surface of the wafer, the wafer having devices formed in a plurality of regions partitioned by the streets, the laser processing method including: a wafer holding step of holding an undersurface of the wafer by a chuck table; a resin supplying step of supplying a water-soluble liquid resin to the top surface of the wafer; a protective film forming step of forming a protective film P on the wafer as a result of drying the water-soluble liquid resin by irradiating the water-soluble liquid resin with light from a xenon flash lamp; a laser irradiating step of irradiating the wafer with a laser beam through the protective film along the streets; and a cleaning step of cleaning the wafer after the laser irradiating step.

Laser processing method

Disclosed herein is a wafer processing method in which laser processing is carried out on a wafer along streets. The wafer processing method includes a step of holding the wafer by a chuck table, a protective film forming step of forming a water-soluble protective film on a surface of the wafer, a laser beam irradiating step of irradiating the wafer with a laser beam along the streets after the protective film forming step, a step of supplying a chemical having an amino group to the wafer, and a removing step of cleaning and removing a compound that is generated by the supplying of the chemical having an amino group and contains phosphorus.

Wafer processing method

Disclosed herein is a protective film detecting method of detecting the formed condition of a protective film formed on the front side of a workpiece. The protective film detecting method includes a fluorescence intensity measuring step of forming a plurality of reference protective films having different thicknesses on the front sides of a plurality of reference workpieces, next applying excitation light absorbable by an absorbing agent contained in each reference protective film to each reference protective film, and next measuring the intensity of fluorescence emitted from the absorbing agent due to the absorption of the excitation light, and a threshold deciding step of deciding a threshold of the fluorescence intensity corresponding to a desired one of the different thicknesses of the reference protective films according to the fluorescence intensity measured above.

Protective film detecting method for laser processing

A wafer processing method includes a wafer holding step of holding a wafer having devices formed on the front side, a protective film forming step of forming a water-soluble protective film on the front side of the wafer, a laser beam applying step of applying a laser beam to the wafer along streets, a cleaning step of cleaning the wafer to then remove the protective film, and a foreign matter removing step of removing foreign matter from the wafer when a predetermined period of time has elapsed after cleaning. This period of time is set as a period of time until a phosphorus containing reaction product produced at a laser processed portion is evaporated to react with water in the air, thereby producing the foreign matter containing phosphorus on bumps formed on each device.

Disclosed herein is a protective film detecting method including the steps of supplying a mist to a work surface of a workpiece in the condition where the work surface is coated with a protective film, applying light to the work surface of the workpiece, imaging the work surface of the workpiece after supplying the mist, and detecting an uncoated area where the protective film is not formed, by using a difference in light intensity between a coated area where the protective film is formed and the uncoated area where the protective film is not formed to cause the formation of asperities due to droplets formed from the mist supplied to the work surface of the workpiece and the occurrence of Mie scattering of the light applied to the asperities, the difference in light intensity being detected from an image obtained in the imaging step.

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Tokyo, Japan

Senichi Ryo