Fujitsu Corporation

Other

The Furukawa Electric Co., Ltd.

Fujitsu Semiconductor Limited

Fujitsu Interconnect Technologies Limited

Seiki Sakuyama

Kozo Shimizu

Toshiya Akamatsu

Nobuhiro Imaizumi

Taiji Sakai

Taiki Uemura

Hiroki Uchida

Keisuke Uenishi

Masataka Mizukoshi

Yoshihiro Mizuno

Yasuo Yamagishi

Daisuke Mizutani

Shinichi Hirose

Masateru Koide

Taisuke Iwai

Isao Watanabe

Yoshitaka Yamaguchi

Toyoo Miyajima

Koji Asano

Masaaki Norimatsu

Yukie Sakita

Yohei Yagishita

Joji Fujimori

Tomohisa Yagi

Taro Matsuoka

Kenichi Yasaka

Toru Sakai

Keishiro Okamoto

Masayuki Ochiai

Ichiro Yamaguchi

Aki Dote

Masaharu Furuyama

Toshiki Iwai

Tetsuhiro Nakanishi

An electronic device includes: a first layer that includes first electronic components in a group and has a first through space between adjacent ones of the first electronic components; and a second layer that is stacked over the first layer and includes second electronic components which are coupled to the first electronic components and a second through space between adjacent ones of the second electronic components, the second through space being partially overlapping with the first through space.

Electronic device, method of manufacturing electronic device, and electronic apparatus

A circuit board includes: a first substrate including a first through hole, a first metal layer formed over an inner wall of the first through hole, and a first conductive composite resin provided on an inner side of the first metal layer of the first through hole; and a second substrate stacked together with the first substrate and including a second through hole that faces the first through hole and has a first open end which is provided on a side of the first through hole and is located on the inner side of the first metal layer, and a second conductive composite resin that is provided in the second through hole and is coupled to the first conductive composite resin.

Circuit board, method of manufacturing circuit board, and electronic device

An electronic device includes: a first circuit board; a second circuit board located above a first region of the first circuit board; a first semiconductor element located above a second region of the first circuit board, which is different from the first region, and above a third region of the second circuit board; a first connection interposed between the first semiconductor element and the second region so as to electrically interconnect the first semiconductor element and the first circuit board; and a second connection interposed between the first semiconductor element and the third region so as to electrically interconnect the first semiconductor element and the second circuit board.

Electronic device, method for manufacturing the electronic device, and electronic apparatus

An electronic apparatus includes: a first electronic component including a first electrode; solder on the first electrode; and a phase containing In, Ag, and Cu, the phase being dispersed and included in the solder. And a method for manufacturing an electronic apparatus, the method includes: forming solder on a first electrode of a first component, the solder including a phase containing In, Ag, and Cu, the phase being dispersed in the solder.

Electronic apparatus and method for manufacturing the same

A surface of at least one of a connection terminal of an electronic component and a connection terminal of a circuit board is covered with a protection layer made of a AgSn alloy. The connection terminal of the electronic component is soldered to the connection terminal of the circuit board.

Electronic component and electronic device

An electronic device includes an electrode including Cu, a solder including Sn and provided above the electrode, and a joining layer including In and Ag and provided along a boundary between the electrode and the solder. The joining layer including In and Ag prevents Cu&#x2014;Sn alloy, such as CuSn, from being formed at the boundary between the electrode and the solder, and prevents generation of voids and cracks resulting from the Cu&#x2014;Sn alloy. The electrode and the solder are joined with sufficient strength by the joining layer.

Electronic device and electronic apparatus

An electronic device includes a first electronic part, a second electronic part opposite the first electronic part, and a bonding portion between the first electronic part and the second electronic part. The bonding portion contains a solder containing a substance whose crystal structure reversibly changes in temperature rise and fall processes which accompany the operation of the electronic device or electronic equipment including the electronic device. A change in the crystal structure of the substance contained in the solder promotes recovery and recrystallization of the solder in the temperature rise and fall processes which accompany the operation of the electronic device or the electronic equipment. As a result, the coarsening of crystal grains in the solder is suppressed.

Electronic device, electronic part, and solder

An electronic apparatus includes a first electronic part with a first terminal, a second electronic part with a second terminal opposite the first terminal, and a joining portion which joins the first terminal and the second terminal. The joining portion contains a pole-like compound extending in a direction in which the first terminal and the second terminal are opposite to each other. The joining portion contains the pole-like compound, so the strength of the joining portion is improved. When the first terminal and the second terminal are joined, the temperature of one of the first electronic part and the second electronic part is made higher than that of the other. A joining material is cooled and solidified in this state. By doing so, the pole-like compound is formed.

Electronic apparatus and method for fabricating the same

An electrical apparatus includes a first electrical component; a second electrical component; and an In&#x2014;Sn&#x2014;Ag alloy connecting the first electrical component and the second electrical component, the In&#x2014;Sn&#x2014;Ag alloy containing AgInand AgIn, a AgIn content being lower than a AgIncontent.

Electrical apparatus

A method of manufacturing a semiconductor device includes forming a barrier metal film on a surface of at least one of a first electrode of a wiring board and a second electrode of a semiconductor element, providing a connection terminal between the first and second electrodes, the connection terminal being made of solder containing tin, bismuth and zinc, and bonding the connection terminal to the barrier metal film by heating the connection terminal and maintaining the temperature of the connection terminal at a constant temperature not lower than a melting point of the solder for a certain period of time.

Semiconductor device having connection terminal of solder

An electronic device includes: a first electronic component; first members that are provided on a first surface of the first electronic component and that include outside surfaces configured to face diagonally upward with respect to the first surface; a second electronic component provided above the first surface; second members that are provided corresponding to the first members on a second surface of the second electronic component which faces the first surface and that include inside surfaces configured to face diagonally downward with respect to the second surface and configured to face the outside surfaces; and solder that is provided between the first surface and the second surface and that electrically connects the first electronic component and the second electronic component.

Electronic device and method of manufacturing electronic device

Growing community of inventors

Isehara, Japan

Seiki Sakuyama