Hitachi, Ltd.

Hatachi Ltd

Seiki Harada

Atsushi Saiki

Kiichiro Mukai

Yoichi Oba

Kikuji Sato

Toshio Okubo

Yoshio Homma

Saburo Nonogaki

Atsushi Hiraiwa

Satoru Ito

Shigeru Takahashi

Takashi Nishida

Sukeyoshi Tsunekawa

Akira Sato

Takao Iwayanagi

Katsuhisa Usami

Shin-ichi Muramatsu

Seiichi Iwata

Akira Abe

Hiroshi Morisaki

Takeo Yoshimi

Takeshi Takagi

Genichi Kamoshita

Yuichiro Oya

Terue Tsunoda

Yoshio Hom-ma

Hisao Nozawa

Masami Tomono

A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 &mgr;m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.

Integrated circuit having reduced soft errors and reduced penetration of alkali impurities into the substrate

A semiconductor device wherein a coating film which is made of a polyimide resin or a polyimide isoindoloquinazolinedione resin and which is at least 10 .mu.m thick is disposed on at least an active region of a semiconductor substrate, and the resultant semiconductor substrate is encapsulated in a ceramic package. The semiconductor device has troubles relieved conspicuously, the troubles being ascribable to alpha-rays which come flying from impurities contained in the material of the package.

Integrated circuit having reduced soft errors and reduced penetration of

Semiconductor device and method for producing the same

Disclosed is a selective etching method of a polyimide type resin film which uses an etching mask consisting of a negative type photoresist material prepared by adding a photosensitive reagent to an unsaturated ketone polymer such as polymethylisopropenylketone as the base resin and an etching solution consisting of 20 to 40% by volume of hydrazine hydrate and the balance of a polyamine. The etching method of the present invention can provide the pattern of the polyimide type resin film having high dimensional accuracy by wet etching.

Selective etching method of polyimide type resin film

Herein disclosed is a sputtering apparatus in which a substrate electrode has its electrode surface plate made of a soft magnetic material. The thickness distribution of the film deposited is made uniform by the use of the sputtering apparatus.

Sputtering apparatus

A semiconductor device has a passivation layer disposed on a semiconductor body having at least one circuit element therein. This layer is made of a silicon nitride material containing 0.8-5.9 weight-% of H, together with 61-70 weight-% of Si, 25-37 weight-% of N and up to 0.6 weight-% of O and has a density of 2.9-3.05 gr/cm.sup.3.

Semiconductor device with high density low temperature deposited Si.sub.w

A semiconductor device fabricated by forming a layer of cured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said cured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said cured layer through said prescribed pattern, whereby said cured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.

Method for fabricating semiconductor device and etchant for polymer resin

A lift-off layer made of a non-photosensitive resin or the like deposited on a substrate is put into a pattern inverse to an interconnection pattern by etching employing a molybdenum mask, a metal layer for interconnection metalization is formed on the whole area of the lift-off layer, and the molybdenum mask is removed by electrolytic etching, to simultaneously strip off and remove the metal layer overlying the mask, whereby an interconnection is formed. Thus, the interconnection can be formed in a much shorter time than in a prior-art lift-off technique.

Method of forming an interconnection

A semiconductor device fabricated by forming a layer of semicured polyimide resin on a semiconductor body, forming a photoresist layer having a prescribed pattern on said semicured layer, immersing in an etchant consisting of hydrazine and ethylenediamine to said semicured layer through said prescribed pattern, whereby said semicured layer is precisely etched according to said prescribed pattern and prescribed surfaces of said semiconductor body are exposed, curing said semicured polyimide so as to form a layer of said polyimide resin, forming a metal layer on the surface of said polyimide and the prescribed surfaces of said body, and selectively etching said metal layer so as to form a prescribed pattern.

Disclosed is a semiconductor device including a Si body, and SiO.sub.2 layer disposed on the surface of the body, an aluminum oxide layer having a thickness of about 50 A on the SiO.sub.2 layer, which is formed by applying a solution including an aluminum chelate compound onto the SiO.sub.2 layer and heating the solution at a temperature of 300.degree. C. for 30 minutes, and a polymer resin layer of polyimide disposed on the aluminum oxide layer. In this device, the adhesive-strength between the SiO.sub.2 layer and the polyimide layer is remarkably increased when compared with a semiconductor device wherein the polyimide layer is directly disposed on the SiO.sub.2 layer.

Aluminum oxide layer bonding polymer resin layer to semiconductor device

Disclosed is a discrete semiconductor device comprising a Si body having an emitter region, a base region and a collector region, an SiO.sub.2 layer disposed on the surface of the body, a polyimide resin having a thickness of 5 .mu. disposed on the SiO.sub.2 layer, electrodes penetrating through the SiO.sub.2 layer and the polyimide resin thereby contacting the emitter region and the base region, respectively and extending on the surface of the polyimide resin, whereby it becomes easy to bond a wire connected to an external electrode with the electrodes.

Discrete semiconductor device having polymer resin as insulator and

An insulating film provided on the surface of a semiconductor device having a protective film of silicon dioxide is composed of a double layer. The double layer consists of a thin film which is disposed on at least a part of the protective film of silicon dioxide and which is made of an organic compound containing either an amino group as well as an alkoxysilane group or an epoxy group as well as an alkoxysilane group, and a film which is disposed so as to cover the thin film of an organic compound and which is made of a heat-resisting polymer resin. The heat-resisting polymer is the reaction product of 4,4'-diamino-diphenylether, 4,4'-diamino-diphenyl ether-3-carbonyl amide, and pyromellitic acid dianhydride.

Growing community of inventors

Hachioji, Japan

Seiki Harada