Hitachi, Ltd.

Renesas Technology Corp.

Renesas Electronics Corporation

Nippon Tokushu Kent Co., Ltd.

Seiichi Kondo

Yoshio Homma

Noriyuki Sakuma

Kenji Hinode

Naofumi Ohashi

Toshinori Imai

Nobuo Owada

Hizuru Yamaguchi

Junji Noguchi

Kenichi Takeda

Yasuo Wada

Takeshi Kimura

Hiroki Nezu

Yasushi Tomioka

Kan Yasui

Ui Yamaguchi

Youhei Yamada

Masaaki Fujimori

Seiji Heike

Tsuyoshi Uda

Munehisa Mitsuya

Tsuneo Ichiguchi

Katsumi Kondo

Tokuo Kure

Naoki Tanaka

Masayuki Suzuki

Masukazu Igarashi

Yoshio Kawamura

Hiroshi Kajiyama

Nobuyoshi Kobayashi

Hideaki Kawakami

Hisashi Nagano

Shinji Okazaki

Shuji Imazeki

Souichi Katagiri

Minoru Honda

Kiichiro Mukai

Yoshio Taniguchi

Soichi Katagiri

Kaori Misawa

Tatsuo Kanetake

Yoshimasa Murayama

Makoto Matsui

Akito Sakurai

Mark I Lutwyche

Shunichi Tokitoh

Takashi Nasuno

Masahiro Kaise

In order to provide an anticorrosive technique for metal wirings formed by a chemical mechanical polishing (CMP) method, a process for manufacturing a semiconductor integrated circuit device according to the invention comprises the steps of: forming a metal layer of Cu (or a Cu alloy containing Cu as a main component) over the major face of a wafer and then planarizing the metal layer by a chemical mechanical polishing (CMP) method to form metal wirings; anticorroding the planarized major face of the wafer to form a hydrophobic protective film over the surfaces of the metal wirings; immersing the anticorroded major face of the wafer or keeping the same in a wet state so that it may not become dry; and post-cleaning the major face, kept in the wet state, of the wafer.

Process for manufacturing semiconductor integrated circuit device

A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced. A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

Polishing method

Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.

Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device

A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items such as slurries and polishing pads is reduced A metal film formed on an insulating film comprising a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.

A first CVD dielectric layer is deposited on a surface of a semiconductor substrate. Next, low-k layers are deposited in at least two different steps to form one of a via-layer dielectric film and a wiring-layer dielectric film on the first CVD dielectric layer. Immediately after the depositions, thermal treatment is performed. A second CVD dielectric layer is deposited on the low-k layers. A groove is formed in the second CVD dielectric layer and the low-k layers. A metal layer is deposited on that structure, filling the groove. The metal layer is removed from the second CVD dielectric layer by chemical mechanical polishing.

Method of manufacturing semiconductor device

In a polishing apparatus having a cover body with fluid pressing mechanism, during polishing, vibration and migration of sticking portion between a retainer and a membrane generated in downstream of rotation of a polishing platen is prevented by reducing sticking force between the retainer and the membrane to less than force needed to wafer polishing with rotation of the cover body.

Polishing apparatus

The invention provides a method for manufacturing a semiconductor device with reduced dishing and erosion. In this method for manufacturing a semiconductor device, the convex/concave pattern is planarized by relatively moving a substrate having the convex/concave pattern on the surface and a polishing tool with pressing the convex/concave surface of the substrate on the polishing tool. The polishing tool is provided with a grindstonehaving a plurality of polygonal segments, which comprises abrasivethat is bonded together with resinand contains pores. The polygonal segments are arranged so that corners of three or more polygonal segments are not located near each other.

Method for manufacturing a semiconductor device that includes planarizing with a grindstone that contains fixed abrasives

The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.

Methods of polishing, interconnect-fabrication, and producing semiconductor devices

A method of manufacturing is described wherein a semiconductor device has a substrate as workpiece with an insulation film formed on the substrate, openings formed inside the insulation film, a first conductive film is formed inside the openings and on a surface of the insulation film, a second conductive film is formed on the first conductive film, and the first and the second conductive films are formed inside openings by planarizing a surface of second conductive film and a surface part of the first conductive film with a fixed abrasive tool. The method includes supplying a first processing liquid, planarizing the surface of the second conductive film with the first processing liquid and the fixed abrasive tool, switching the supply of liquid from a first processing liquid to a second processing liquid, and planarizing the surface of second conductive film and the surface of part of the first conductive film with the second processing liquid and the fixed abrasive tool.

Method of polishing a semiconductor device

Growing community of inventors

Kokubunji, Japan

Seiichi Kondo