Carl Zeiss Smt Gmbh

Sebastian Strobel

Hartmut Enkisch

Oliver Dier

Joern Weber

Ralf Winter

Thomas Schicketanz

Christian Grasse

Vitaliy Shklover

Kerstin Hild

Hans-Jochen Paul

Peter Huber

Stephan Six

Michael Krause

Martin Hermann

Christoph Nottbohm

Mirko Ribow

Matthias Sturm

Sandro Hoffmann

Jörn Weber

In a method for producing an optical element for an EUV projection exposure apparatus, a shaping layer () is applied onto a substrate () so as to have a surface roughness of at most 0.5 nm rms directly after the application of the shaping layer onto the substrate.

Optical element for a EUV projection exposure system

Treating a reflective optical element () for the EUV wavelength range that has a reflective coating on a substrate. The reflective optical element in a holder () is irradiated with at least one radiation pulse of a radiation source () having a duration of between 1 &#x3bc;s and 1 s. At least one radiation source () and the reflective optical element move relative to one another. Preferably, this is carried out directly after applying the reflective coating in a coating chamber (). Reflective optical elements of this type are suitable in particular for use in EUV lithography or in EUV inspection of masks or wafers, for example.

Method for treating a reflective optical element for the EUV wavelength range, method for producing same, and treating apparatus

A method for producing a mirror element, in particular for a microlithographic projection exposure apparatus includes: providing a substrate (); and forming a layer stack () on the substrate, wherein the layer stack is formed so that a setpoint curvature of the mirror element for a predetermined operating temperature is generated by a bending force exerted by the layer stack, wherein the substrate has a curvature deviating from the setpoint curvature of the mirror element prior to the formation of the layer stack, and wherein the bending force exerted by the layer stack is at least partly generated by virtue of a post-treatment for changing the layer tension of the layer stack.

Method for producing a mirror element

An EUV mirror has a multilayer arrangement applied on a substrate. The multilayer arrangement includes a first layer group having ten or more first layer pairs. Each first layer pair has a first layer composed of a high refractive index first layer material having a first layer thickness, has a second layer composed of a low refractive index second layer material having a second layer thickness and has a period thickness corresponding to the sum of the layer thicknesses of all the layers of a first layer pair. The layer thicknesses of one of the layer materials are defined, depending on the period number, by a simply monotonic first layer thickness profile function, e.g. by a linear, quadratic or exponential layer thickness profile function. The layer thicknesses of the other of the layer materials vary, depending on the period number, in accordance with a second layer thickness profile function.

EUV mirror and optical system comprising EUV mirror

A reflective optical element () having a substrate () and a multilayer system () that has a plurality of partial stacks (), each with a first layer () of a first material and a second layer () of a second material. The first material and the second material differ from one another in refractive index at an operating wavelength of the optical element. Each of the partial stacks has a thickness (D) and a layer thickness ratio (&#x393;), wherein the layer thickness ratio is the quotient of the thickness of the respective first layer and the partial stack thickness (D). In a first section of the multilayer system, for at least one of the two variables of partial stack thickness (D) and layer thickness ratio (&#x393;), the mean square deviation from the respective mean values therefor is at least 10% less than in a second section of the multilayer system.

Reflective optical element, and optical system of a microlithographic projection exposure apparatus

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Aalen, Germany

Sebastian Strobel