Hyundai Electronics Industries Co. Ltd.

Seaung Suk Lee

Jong Choul Kim

Ho Gi Kim

Soo Han Choi

Won Jae Lee

A method for fabricating highly integrated semiconductor devices with capacitors having a dielectric film comprised of a thin film exhibiting a high dielectric constant to obtain a sufficient capacitance, involving the formation of an under electrode over a wafer formed with an oxide film at a high temperature, and annealing the resulting wafer in a vacuum such that the under electrode has a tight and smooth structure. By virtue of the tight and smooth structure of the under electrode, subsequent processing steps can be easily carried out. It is also possible to achieve an improvement in the reliability and uniformity of semiconductor devices as well as a high integration of such semicoductor devices.

Method for fabricating semiconductor device

The present invention is to provide a method for forming ferroelectric films using a hot-wall chemical vapor deposition apparatus, comprising the steps of: heating the processing tube and a plurality of receptacles which contain ferroelectric source materials; loading wafers into said processing tube; conveying vaporized gases from said receptacles to a mixing chamber using carrier gas when said processing is set to a predetermined temperature and mixing said vaporized gases in said mixing chamber, by keeping said processing tube vacuum; providing said mixing chamber with oxidization gas and reaction speed control gas to control reaction speed in said processing tube; and injecting mixed gases in said mixing chamber into said processing tube through a gas injecting means and depositing said mixed gases in said mixing chamber on the wafers.

Growing community of inventors

Bubaleub, South Korea

Seaung Suk Lee