Intel Corporation

University of Missouri

Sean W King

Hui Jae Yoo

Timothy E Glassman

Sreenivas Kosaraju

Andrew W Ott

Jason W Klaus

Ajay K Sharma

Willy Rachmady

Ruth Amy Brain

Sanjay S Natarajan

Jeffery D Bielefeld

Khaled A Elamrawi

Jack T Kavalieros

Ravi Pillarisetty

Matthew V Metz

Niloy Mukherjee

Mauro J Kobrinsky

Christopher J Jezewski

Scott Bruce Clendenning

Ramanan Chebiam

Carl H Naylor

Jasmeet S Chawla

Sridhar Balakrishnan

Anthony N Caruso

Chi-Hwa Tsang

Sudarat Lee

Dennis G Hanken

Michelle Paquette

Bradley Nordell

Hossein Rojhantalab

Sunny Chugh

Integrated circuitry interconnect structures comprising a first metal and a graphene cap over a top surface of the first metal. Within the interconnect structure an amount of a second metal, nitrogen, or silicon is greater proximal to an interface of the graphene cap. The presence of the second metal, nitrogen, or silicon may improve adhesion of the graphene to the first metal and/or otherwise improve electromigration resistance of a graphene capped interconnect structure. The second metal, nitrogen, or silicon may be introduced into the first metal during deposition of the first metal, or during a post-deposition treatment of the first metal. The second metal, nitrogen, or silicon may be introduced prior to, or after, capping the first metal with graphene.

Integrated circuit interconnect structures with graphene cap

Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

Conformal low temperature hermetic dielectric diffusion barriers

A method of forming a low-dielectric-constant amorphous hydrogenated boron carbide film on a substrate includes positioning the substrate within a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a boron carbide precursor and introducing the boron carbide precursor into a carrier gas to form a carrier gas-precursor mixture. The method also includes introducing the carrier gas-precursor mixture into the PECVD chamber. The method also includes applying radio frequency power within the PECVD chamber to the carrier gas-precursor mixture to form one or more plasmas containing one or more species containing at least one of boron, carbon or hydrogen. The method also includes forming the low-dielectric-constant amorphous hydrogenated boron carbide film on the substrate within the PECVD chamber.

Amorphous hydrogenated boron carbide low-k dielectric and method of making the same

The present disclosure relates to the field of microelectronic transistor fabrication and, more particularly, to forming a graphene layer as a channel layer for a microelectronic transistor.

Microelectronic transistor having an epitaxial graphene channel layer

The present invention describes a method including: providing a substrate; stacking interlevel dielectric layers over said substrate, and separating said interlevel dielectric layers with a dielectric separator layer.

Dielectric separator layer

Growing community of inventors

Hillsboro, OR, United States of America

Sean W King