International Business Machines Corporation

Sean P E Smith

Mahadevaiyer Krishnan

Timothy Joseph Dalton

Donald Francis Canaperi

Judith Marie Rubino

Sampath Purushothaman

Katherine Lynn Saenger

Stephen McConnell Gates

Sandra Guy Malhotra

Andrew Herbert Simon

David Lee Rath

Chandrasekhar Narayan

Shyng-Tsong Chen

Kaushik Arun Kumar

Michael F Lofaro

Chao-Kun Hu

Darryl D Restaino

Satya Venkata Nitta

Wei-Tsu Tseng

Fen Fen Jamin

Kenneth M Davis

Steffen K Kaldor

James Edward Fluegel

Richard O Henry

An aqueous seeding solution of palladium acetate, acetic acid and chloride.

Manufacturable CoWP metal cap process for copper interconnects

A method to electrolessly plate a CoWP alloy on copper in a reproducible manner that is effective for a manufacturable process. In the method, a seed layer of palladium (Pd) is deposited on the copper by an aqueous seeding solution of palladium acetate, acetic acid and chloride. Thereafter, a complexing solution is applied to remove any Pd ions which are adsorbed on surfaces other than the copper. Finally, a plating solution of cobalt (Co), tungsten (W) and phosphorous (P) is applied to the copper so as to deposit a layer of CoWP on the Pd seed and copper.

An integrated circuit structure is disclosed that has a layer of logical and functional devices and an interconnection layer above the layer of logical and functional devices. The interconnection layer has a substrate, conductive features within the substrate and caps positioned only above the conductive features.

Copper recess process with application to selective capping and electroless plating

A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less-robust gap fill dielectric is disposed in the remainder of the structure, so that the structure combines a durable layer for strength with a very low k dielectric for interconnect electrical performance.

Very low effective dielectric constant interconnect structures and methods for fabricating the same

A structure incorporates very low dielectric constant (k) insulators with copper wiring to achieve high performance interconnects. The wiring is supported by a relatively durable low k dielectric such as SiLk or SiO2 and a very low k and less robust gap fill dielectric is disposed in the remainder of the structure, so that the structure combines a durable layer for strength with a very low k dielectric for interconnect electrical performance.

Very low effective dielectric constant interconnect Structures and methods for fabricating the same

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Hopewell Junction, NY, United States of America

Sean P E Smith