Samsung Aerospace Industries, Ltd.

Other

Samsung Techwin Co., Ltd.

Se-Chul Park

Sung-il Kang

Kyu-han Lee

Dong-Il Shin

Bae-soon Jang

Nam-seog Kim

Sang-hoon Lee

Ju-bong Kim

Sang-hun Lee

A lead frame for a semiconductor package includes a base metal layer made of copper (Cu), Cu alloy or iron-nickel (Fe-Ni) alloy, an underlying plating layer formed on at least one surface of the base metal layer and made of Ni or Ni alloy, an intermediate plating layer formed on the underlying plating layer to a thickness of about 0.00025 to about 0.1 &mgr;m (about 0.1 to about 4 microinches) and made of palladium (Pd) or Pd alloy, and an outer plating layer formed in the intermediate plating layer to a thickness of about 0.05 to about 0.75 &mgr;m (about 2 to 30 microinches) and made of silver (Ag) or Ag alloy. Since an Ag plated layer is formed as the outer plating layer, excellent oxidation resistance and corrosion resistance can be exhibited even under a high-temperature thermal condition, thereby improving wire bondability, solderability and good adhesion with epoxy for use in the semiconductor package, and preventing heel crack at a wire bonding portion. In particular, since thin layers of the Pd plated layer and Ag plated layer are used, Ag migration can be prevented. Also, the amount of a noble metal such as Pd or Ag can be greatly reduced, thereby attaining thin-film, light-weight semiconductor packages.

Ag-pre-plated lead frame for semiconductor package

A method for manufacturing a lead frame including the steps of electrocleaning the surface of a thin plate material, electropolishing the electrocleaned thin plate material, removing inclusions on the surface of the electropolished thin plate material, rinsing the inclusion-removed thin plate material with an acidic solution, and forming multi-plated layers on the rinsed material. The lead frame manufactured by the method has 5 or less inclusions each having approximately 1 &mgr;m, on the surface area of 1600 &mgr;m , which impede a wire bonding property or solder wettability of the lead frame.

Lead frame and method of manufacturing the lead frame

A lead frame for a semiconductor package and a method for manufacturing the lead frame. In the manufacture of the lead frame, a protective layer is formed with nickel (Ni) or Ni alloy on a metal substrate, an intermediate layer is then formed with palladium (Pd) or Pd alloy on the protective layer. Then, Pd and gold (Au) are alternately plated on the surface of the intermediate layer to form an outermost layer including both Pd and Au particles thereon.

Lead frame and method for plating the same

A lead frame for semiconductor devices including a metal substrate having inner leads and outer leads, a nickel thin layer formed on the metal substrate, an outer layer formed of palladium or a palladium alloy on the nickel thin layer, and a protection layer formed of gold or platinum between the nickel thin layer and the outer layer.

Lead frame for semiconductor device

A lead frame plating method including the steps of (a) forming an intermediate layer on the upper surface of a metal substrate, (b) submerging the metal substrate into a plating solution, and (c) forming a passive layer to a thickness of 0.01 to 1.5 microinches on the upper surface of the intermediate layer by applying a modulated current to the plating solution and the metal substrate.

Growing community of inventors

Changwon, South Korea

Se-Chul Park