Emcore Corporation

Scott Beherrell

Alexander I Gurary

Vadim Boguslavskiy

David Russell Voorhees

Paul Thomas Fabiano

A chemical vapor deposition reactor includes a pancake type induction heating device to achieve operating temperature within the reactor chamber. By design of the susceptor, the induction magnetic force created at the top surface of the susceptor is insufficient to effect levitation of the wafer carrier during epitaxial deposition at high temperatures in the order of about 1500-1800&deg; C.

Induction heated chemical vapor deposition reactor

Apparatus for mounting wafers in an epitaxial reactor is disclosed. The apparatus includes a wafer carrier for holding the wafer during the epitaxial deposition, including a depressed region for the wafer, and a positioning wire located in the depressed region to maintain the position of the wafer without interfering with the epitaxial deposition process itself.

Wafer carrier with flexible wafer flat holder

Apparatus for the growth of epitaxial layers is disclosed. The apparatus includes a wafer carrier mounted within a growth chamber, a reactant inlet for introducing a reactant into the chamber, and a heating element mounted within the chamber for heating wafers mounted on the wafer carrier. The heating element is mounted in a manner which permits unrestricted thermal expansion of the heating element therein.

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Phillipsburg, NJ, United States of America

Scott Beherrell