Applied Materials, Inc.

Applied Material, Inc.

Schubert S Chu

Zhiyuan Ye

Nyi O Myo

Hua Chung

Errol Antonio C Sanchez

Xuebin Li

Zhepeng Cong

Zuoming Zhu

Seshadri Ganguli

Xinyu Bao

Abhishek Dube

Kartik Bhupendra Shah

Paul F Ma

Yi-Chiau Huang

Christophe Marcadal

Kevin Joseph Bautista

Shu-Kwan Danny Lau

Kin Pong Lo

Chun Yan

Kavita Shah

Dien-Yeh Wu

Patricia M Liu

Flora Fong-Song Chang

Paul Brillhart

Anzhong Chang

Edric Tong

Richard Omar Collins

Norman M Nakashima

Anhthu Ngo

Mei Yin Chang

Jeffrey W Anthis

Balasubramanian Ramachandran

Errol C Sanchez

Koji Nakanishi

James Francis Mack

Toshiyuki Nakagawa

Frederick C Wu

Joseph Michael Ranish

David P Thompson

Feng Quan Liu

Lara Hawrylchak

Gaurav Thareja

Yihwan Kim

Martin A Hilkene

Ala Moradian

Haichun Yang

Tushar Mandrekar

Jenny Lin

Bindusagar Marath Sankarathodi

Enle Choo

Surendra Singh Srivastava

Wei Liu

Mark Joseph Saly

Shashank Sharma

Satheesh Kuppurao

Lori D Washington

Brian Hayes Burrows

Kevin Vincent Moraes

Karthik Ramanathan

Sang-Ho Yu

See-Eng Phan

Jessica Sevanne Kachian

Vilen K Nestorov

Manish Hemkar

Jenn-Yue Wang

John Boland

Srividya Natarajan

Melitta Manyin Hon

Maxim Shaposhnikov

Palamurali Gajendra

Papo Chen

Ying Di Zhang

Er-Xuan Ping

Stephen Moffatt

Nir Merry

Mehmet Tugrul Samir

Joseph F AuBuchon

Regina Germanie Freed

Xiaoxiong Yuan

Jeffrey A Tobin

Raymond Hoiman Hung

Michael C Kuchar

Sushant Suresh Koshti

Leonid Mark Tertitski

Kim Ramkumar Vellore

Saurabh Chopra

Douglas Earl Holmgren

David Michael Thompson

Matthias Bauer

Surajit Kumar

Nitin Pathak

Shay Assaf

Xianzhi Tao

Steven H Kim

Yoshihide Senzaki

Ji-Dih Hu

Puneet Bajaj

Herman Diniz

Preetham Rao

Chen-Ying Wu

Methods for detection using optical emission spectroscopy in which an optical signal is delivered from the process chamber to an optical emission spectrometer (OES). The OES identifies emission peaks of photons, which corresponds to the optical intensity of radiation from the photons, to determine the concentrations of each of the precursor gases and reaction products. The OES sends input signals of the data results to a controller. The controller can adjust process variables within the process chamber in real time during deposition based on the comparison. In other embodiments, the controller can automatically trigger a process chamber clean based on a comparison of input signals of process chamber residues received before the deposition process and input signals of process chamber residues received after the deposition process.

Methods for detection using optical emission spectroscopy

In one embodiment, a susceptor for thermal processing is provided. The susceptor includes an outer rim surrounding and coupled to an inner dish, the outer rim having an inner edge and an outer edge. The susceptor further includes one or more structures for reducing a contacting surface area between a substrate and the susceptor when the substrate is supported by the susceptor. At least one of the one or more structures is coupled to the inner dish proximate the inner edge of the outer rim.

Thermal processing susceptor

Embodiments disclosed herein generally provide improved control of gas flow in processing chambers. In at least one embodiment, a liner for a processing chamber includes an annular body having a sidewall and a vent formed in the annular body for exhausting gas from inside to outside the annular body. The vent comprises one or more vent holes disposed through the sidewall. The liner further includes an opening in the annular body for substrate loading and unloading.

Overlap susceptor and preheat ring

Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(RHSi)—(RHSi)]PHR', where each instance of R and each instance of R′ are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

Method for forming silicon-phosphorous materials

An apparatus for controlling temperature profile of a substrate within an epitaxial chamber includes a bottom center pyrometer and a bottom outer pyrometer to respectively measure temperatures at a center location and an outer location of a first surface of a susceptor of an epitaxy chamber, a top center pyrometer and a top outer pyrometer to respectively measure temperatures at a center location and an outer location of a substrate disposed on a second surface of the susceptor opposite the first surface, a first controller to receive signals, from the bottom center pyrometer and the bottom outer pyrometer, and output a feedback signal to a first heating lamp module that heats the first surface based on the measured temperatures of the first surface, and a second controller to receive signals, from the top center pyrometer, the top outer pyrometer, the bottom center pyrometer, and the bottom outer pyrometer, and output a feedback signal to a second heating lamp module that heats the substrate based on the measured temperatures of a substrate and the measured temperatures of the first surface.

Temperature profile measurement and synchronized control on substrate and susceptor in an epitaxy chamber

Embodiments of the present disclosure generally relate to methods and systems for cleaning a surface of a substrate. In an embodiment, a method of processing a substrate is provided. The method includes introducing a substrate to a processing volume of a processing chamber by positioning the substrate on a substrate support. The method further includes flowing a first process gas into the processing volume, the first process gas comprising HF, flowing a second process gas into the processing volume, the second process gas comprising pyridine, pyrrole, aniline, or a combination thereof, and exposing the substrate to the first process gas and the second process gas to remove oxide from the substrate under oxide removal conditions. In another embodiment, a system is provided that includes a processing chamber to process a substrate, and a controller to cause a processing method to be performed in the processing chamber.

Methods and systems for cleaning high aspect ratio structures

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber includes a substrate support, a first plurality of heating elements disposed over or below the substrate support, and a spot heating module disposed over the substrate support. The spot heating module is utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Multi zone spot heating in EPI

A method for processing a substrate within a processing chamber comprises receiving a first radiation signal corresponding to a film on a target element disposed within the processing chamber, analyzing the first radiation signal, and controlling the processing of the substrate based on the analyzed first radiation signal. The processing chamber includes a substrate support configured to support the substrate within a processing volume and a controller coupled to a first sensing device configured to receive the first radiation signal.

Substrate processing monitoring

Implementations of the present disclosure generally relates to a transfer chamber coupled to at least one vapor phase epitaxy chamber a plasma oxide removal chamber coupled to the transfer chamber, the plasma oxide removal chamber comprising a lid assembly with a mixing chamber and a gas distributor; a first gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a second gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; a third gas inlet formed through a portion of the lid assembly and in fluid communication with the mixing chamber; and a substrate support with a substrate supporting surface; a lift member disposed in a recess of the substrate supporting surface and coupled through the substrate support to a lift actuator; and a load lock chamber coupled to the transfer chamber.

Integrated epitaxy and preclean system

A method and apparatus for a process chamber for thermal processing is described herein. The process chamber is a dual process chamber and shares a chamber body. The chamber body includes a first and a second set of gas inject passages. The chamber body may also include a first and a second set of exhaust ports. The process chamber may have a shared gas panel and/or a shared exhaust conduit.

Multi-thermal CVD chambers with shared gas delivery and exhaust system

A method of fabricating a semiconductor device includes forming an interconnect structure over a front side of a sensor substrate, thinning the sensor substrate from a back side of the sensor substrate, etching trenches into the sensor substrate, pre-cleaning an exposed surface of the sensor substrate, epitaxially growing a charge layer directly on the pre-cleaned exposed surface of the sensor substrate, and forming isolation structures within the etched trenches.

Structure and material engineering methods for optoelectronic devices signal to noise ratio enhancement

A substrate processing system includes a factory interface having a controlled environment and a transfer chamber. The transfer chamber includes four first facets and three second facets, where each of the three second facets has a width that is narrower than that of each of the four first facets. A first processing chamber is attached to one of the four first facets. A first auxiliary chamber is attached to a first of the three second facets, where the first auxiliary chamber is smaller than the first processing chamber. A load lock is attached to a second of the three second facets and to the factory interface. A robot is attached to a bottom of the transfer chamber, the robot adapted to transfer substrates to and from the first processing chamber, the first auxiliary chamber, and the load lock.

Semiconductor processing tool platform configuration with reduced footprint

Processing methods for forming iridium-containing films at low temperatures are described. The methods comprise exposing a substrate to iridium hexafluoride and a reactant to form iridium metal or iridium silicide films. Methods for enhancing selectivity and tuning the silicon content of some films are also described.

Low temperature deposition of iridium containing films

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San Francisco, CA, United States of America

Schubert S Chu