Dai Nippon Printing Co., Ltd.

Dai Nippon Printingco., Ltd.

Sayaka Kawashima

Minoru Komada

Shinya Satou

Keiji Tokunaga

The main object of the present invention is to provide a barrier film having an extremely high barrier property and a good transparency, a laminated material using the above-mentioned barrier film, a packaging container, and an image display medium. The above-mentioned object is achieved by providing a barrier film comprising a base material film and a barrier layer deposited on at least one side surface of the base material film, wherein the barrier layer comprises a water repellent layer and a dense layer, the water repellent layer is a silicon oxide carbide film having the atomic percent of Si:O:C in a range of 100:40 to 120:80 to 160, and the thickness in a range of 2 to 300 nm, and the dense layer is a silicon oxide carbide film having the atomic percent of Si:O:C in a range of 100:100 to 200:5 to 100, and the thickness in a range of 5 to 300 nm.

Barrier film

The main object of the present invention is to provide a gas barrier substrate having a high gas barrier property without a ruggedness, a pin hole or the like in the gas barrier layer. The present invention solves the problem by providing a gas barrier substrate having a base material, a planarization layer formed on the base material, and a gas barrier layer comprising a deposition film formed on the planarization layer.

Gas barrier substrate

A barrier film is provided having extremely high barrier properties and a good transparency as part of a laminated material having use as a packaging container which may possess an image display medium, the high barrier properties and good transparency which are achieved with a barrier film comprised of a base material film and a barrier layer deposited on at least one side surface of the base material film, with the barrier layer comprising a water repellent layer and a dense layer, the water repellent layer being a silicon oxide carbide film having the atomic percent of Si:O:C in a range of 100:40 to 120:80 to 160, and the thickness in a range of 2 to 300 nm, and the dense layer being a silicon oxide carbide film having the atomic percent of Si:O:C in a range of 100:100 to 200:5 to 100, and the thickness in a range of 5 to 300 nm.

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Tokyo, Japan

Sayaka Kawashima